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PDRV5023FIEDBZRQ1

Texas Instruments

PDRV5023FIEDBZRQ1 by Texas Instruments

PDRV5023FIEDBZRQ1 by Texas Instruments is a Hall effect magnetic field sensor with 2.7-38V supply voltage range, AEC-Q100 screening level, and 1.5 mT hysteresis. Ideal for automotive applications due to its digital output type, -40 to 125°C operating temperature range, and compact rectangular package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,784 parts In-Stock

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Vyrian

USA . 3,567 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 586 parts In-Stock

1+ parts

$1.950

100+ parts

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$2.483

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586

$1.950

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$2.483

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DigiPath Technology Company

USA . 443 parts In-Stock

1+ parts

$2.147

100+ parts

$1.975

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443

$2.147

$1.975

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ChromeModa Solutions

Germany . 4,565 parts In-Stock

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$2.191

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$1.797

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$2.191

$1.797

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IDEA Electronic Components Group

UK . 2,344 parts In-Stock

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$2.191

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$1.972

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$2.191

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One Stop Electronics

USA . 667 parts In-Stock

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$5.750

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$5.750

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AZTECH Wire

Italy . 271 parts In-Stock

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$19.583

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$19.583

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Semicontronic

India . 1,273 parts In-Stock

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$36.750

100+ parts

$35.831

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$35.648

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Corphita

USA . 3,748 parts In-Stock

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Corohmni

South Africa . 363 parts In-Stock

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Overview

Unlock the power of precision with the PDRV5023FIEDBZRQ1 by Texas Instruments. As a leader in magnetic field sensors, Texas Instruments delivers unmatched quality and reliability in every product. Designed for a wide range of applications, this sensor offers precise measurements and durability in challenging environments. Experience the value of accurate data collection, improved performance, and peace of mind knowing you have the best-in-class sensor on your side. Elevate your projects with the PDRV5023FIEDBZRQ1 and discover the difference that Texas Instruments can make for you.

Feature Benefit Bullets

Maximum Supply Voltage: 38 V

Allows for a wide range of power supply options, making the sensor versatile for different applications.

Hysteresis: 1.5 mT

Provides a sensitive response to changes in magnetic fields, ensuring accurate and precise measurements.

Minimum Range Of Magnetic Field: 0.5 mT

Can detect even small changes in magnetic fields, making it suitable for detecting subtle variations.

Output Type: DIGITAL VOLTAGE

Provides a digital output signal, which can easily interface with microcontrollers or other digital systems.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature environments, increasing its usability in various conditions.

Mounting Feature: SURFACE MOUNT

Allows for easy and convenient installation on circuit boards, saving space and time during the assembly process.

Technical Specifications

Magnetic Field Sensors PDRV5023FIEDBZRQ1 attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

IT HAS SENSITIVITY 1.3 MT, SHORT CIRCUIT PROTECTION

Body Width:

1.3 inch

Body Height:

1.005 mm

Body Length/Diameter:

2.92 mm

Housing:

PLASTIC

Hysteresis:

1.5 mT

Maximum Magnetic Field Range:

6 mT

Minimum Range Of Magnetic Field:

.5 mT

Mounting Feature:

Maximum Operating Current:

3.5 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Screening Level:

AEC-Q100

Sensors or Transducers Type:

Maximum Supply Voltage:

38 V

Minimum Supply Voltage:

2.7 V

Termination Type:

SOLDER

Trade Compliance

PDRV5023FIEDBZRQ1 Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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