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PCF8575DBQRG4

Texas Instruments

PCF8575DBQRG4 by Texas Instruments

PCF8575DBQRG4 by Texas Instruments is a Parallel I/O Port with 16 bits, 8-bit address bus width, and 3/5V power supplies. It is used for general-purpose parallel I/O applications in industrial settings due to its small outline package style and CMOS technology. Operating temperature ranges from -40 to 85°C, making it suitable for various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 23,502 parts In-Stock

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Vyrian

USA . 2,845 parts In-Stock

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Digiode

USA . 1,346 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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AZTECH Wire

Italy . 337 parts In-Stock

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$14.101

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337

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Parana Technologies

USA . 1,249 parts In-Stock

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$21.637

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$22.047

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Corohmni

South Africa . 291 parts In-Stock

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$24.229

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ChromeModa Solutions

Germany . 5,092 parts In-Stock

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$24.311

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$19.935

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IDEA Electronic Components Group

UK . 1,444 parts In-Stock

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$24.311

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$23.095

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$21.880

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Ampacity Inc.

Singapore . 830 parts In-Stock

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$26.000

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One Stop Electronics

USA . 584 parts In-Stock

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$34.000

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Continental Prestige Electronics

USA . 5,375 parts In-Stock

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Argo Parts USA

USA . 4,681 parts In-Stock

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DigiPath Technology Company

USA . 2,055 parts In-Stock

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$21.919

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Microchip USA

USA . 1,613 parts In-Stock

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Corphita

USA . 440 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock endless possibilities with the PCF8575DBQRG4 by Texas Instruments. Crafted with precision and expertise, this parallel I/O port device offers unparalleled quality and reliability. Ideal for industrial applications, this versatile component provides seamless interfacing with external devices, enhancing efficiency and productivity. Experience seamless performance and effortless integration with the PCF8575DBQRG4, your gateway to innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good durability and reliability, making this product suitable for various industrial applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

Ability to handle up to 5.5V supply voltage provides flexibility in design and compatibility with different power sources.

No. of Bits: 16

16 bits allow for a wide range of input/output possibilities, making this product versatile in handling data.

Maximum Clock Frequency: 0.4 MHz

High maximum clock frequency of 0.4 MHz ensures fast and efficient data transfer, suitable for real-time applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall performance and reliability of this product.

No. of I/O Lines: 16

16 I/O lines provide sufficient connectivity and data transfer capabilities for various applications, making this product a versatile choice.

Technical Specifications

Parallel I/O Ports PCF8575DBQRG4 attributes and parameters. Explore more Parallel I/O Ports devices from Texas Instruments

Specs

Address Bus Width:

8

Maximum Clock Frequency:

.4 MHz

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

2

No. of Bits:

16

No. of I/O Lines:

16

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP24,.24

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Parallel IO Ports

Maximum Supply Current:

.2 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.5 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Peripheral IC Type:

Trade Compliance

PCF8575DBQRG4 Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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