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OPA726AIDGKRG4

Texas Instruments

OPA726AIDGKRG4 by Texas Instruments

OPA726AIDGKRG4 by Texas Instruments is an Operational Amplifier with a Max Input Offset Voltage of 3000uV, Nominal Common Mode Reject Ratio of 94dB, and Nominal Unity Gain Bandwidth of 20MHz. Ideal for automotive applications due to its low-bias current, wide temperature range (-40 to 125°C), and compact package style (3x3mm).

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,617 parts In-Stock

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Digiode

USA . 4,172 parts In-Stock

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Connector Distribution Corp

USA . 250 parts In-Stock

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Right Parts Inc.

USA . 250 parts In-Stock

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250

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Parana Technologies

USA . 1,192 parts In-Stock

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$3.844

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$4.329

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ChromeModa Solutions

Germany . 6,240 parts In-Stock

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$4.319

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$3.542

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IDEA Electronic Components Group

UK . 263 parts In-Stock

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$4.319

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$3.887

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One Stop Electronics

USA . 1,570 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 686 parts In-Stock

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DigiPath Technology Company

USA . 991 parts In-Stock

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Perfect Parts

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Corphita

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Microchip USA

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Overview

Experience superior performance with the OPA726AIDGKRG4 by Texas Instruments. As a leading manufacturer in operational amplifiers, Texas Instruments delivers top-quality products for a wide range of applications. The OPA726AIDGKRG4 stands out with its low input offset voltage and minimal bias current, ensuring precise and efficient operation. With a compact package design and wide temperature range, this op amp offers unmatched value and reliability. Trust Texas Instruments to provide cutting-edge technology that meets your needs with the OPA726AIDGKRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage allows for accurate signal processing and minimal distortion in the output signal.

Nominal Common Mode Reject Ratio: 94 dB

High common mode rejection ratio helps in eliminating unwanted common mode signals and noise from the output, leading to a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 6

Stable supply voltage of 6V ensures consistent performance of the operational amplifier in various applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range of up to 125°C allows for use in harsh environments and industrial applications.

Nominal Unity Gain Bandwidth: 20000 kHz

High unity gain bandwidth ensures fast response times and accurate signal processing, making it ideal for applications requiring high-speed operation.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the operational amplifier energy-efficient and suitable for battery-powered devices.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed to provide high gain, high input impedance, and accurate signal amplification, making it versatile for various applications.

Technical Specifications

Operational Amplifiers (Op Amps) OPA726AIDGKRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2/±6/4/12 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

20 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

63100

Nominal Slew Rate:

30 V/us

Peak Bias Current:

200 pA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

6 V

Maximum Supply Voltage:

6.6 V

Maximum Negative Supply Voltage:

-6 V

Minimum Negative Supply Voltage:

-6.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

6 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

OPA726AIDGKRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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