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OPA4374AIPWRG4

Texas Instruments

OPA4374AIPWRG4 by Texas Instruments

OPA4374AIPWRG4 by Texas Instruments is a CMOS operational amplifier with low bias current (0.00001 uA) and micropower features. It operates at a wide temperature range (-40 to 125 °C) and has a nominal unity gain bandwidth of 6500 kHz, making it suitable for automotive applications. With a compact package style (small outline, thin profile), this op amp offers high performance in space-constrained designs.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 7,500 parts In-Stock

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Vyrian

USA . 5,195 parts In-Stock

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Digiode

USA . 373 parts In-Stock

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373

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Sensible Micro Corp

USA . 183 parts In-Stock

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Nova Conductors

Japan . 24 parts In-Stock

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One Stop Electronics

USA . 1,056 parts In-Stock

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$1.410

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Parana Technologies

USA . 1,708 parts In-Stock

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$2.135

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ChromeModa Solutions

Germany . 4,433 parts In-Stock

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$1.623

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$1.331

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IDEA Electronic Components Group

UK . 1,892 parts In-Stock

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$1.461

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Corohmni

South Africa . 842 parts In-Stock

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$5.735

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Ampacity Inc.

Singapore . 1,585 parts In-Stock

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AZTECH Wire

Italy . 722 parts In-Stock

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Continental Prestige Electronics

USA . 3,202 parts In-Stock

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Microchip USA

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DigiPath Technology Company

USA . 1,908 parts In-Stock

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Argo Parts USA

USA . 1,068 parts In-Stock

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Kepictronics

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Bastille Electronics

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Corphita

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Overview

Elevate your electronic designs with the OPA4374AIPWRG4 from Texas Instruments, a top-tier manufacturer renowned for its quality products. As a part of the Operational Amplifiers category, this versatile component offers exceptional performance and reliability. With low bias current and micropower capabilities, this amplifier is ideal for a wide range of applications in automotive and other industries. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations, bringing value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in the output.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current helps in maintaining stability and precision in circuit operations.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards, saving space and simplifying the assembly process.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in rejecting noise and interference from the input signal, leading to a cleaner output.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, making it compatible with a wide range of applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance, ideal for battery-powered and portable devices.

Nominal Unity Gain Bandwidth: 6500 kHz

Provides high bandwidth for accurate signal processing and fast response times.

Technical Specifications

Operational Amplifiers (Op Amps) OPA4374AIPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

6.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

5 V/us

Maximum Input Offset Current (IIO):

10 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

OPA4374AIPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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