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O3850QDCARQ1

Texas Instruments

O3850QDCARQ1 by Texas Instruments

O3850QDCARQ1 by Texas Instruments is a Power Management IC with 48 terminals, operating temperature range of -40 to 125°C, and output voltage of 6V. Ideal for automotive applications, it features a small outline package style and dual terminal position for efficient power supply management in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,887 parts In-Stock

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Digiode

USA . 532 parts In-Stock

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One Stop Electronics

USA . 1,239 parts In-Stock

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$1.500

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$1.500

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Ampacity Inc.

Singapore . 801 parts In-Stock

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$2.500

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801

$2.500

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Semicontronic

India . 349 parts In-Stock

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$7.500

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$7.312

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$7.275

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349

$7.500

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$7.275

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Parana Technologies

USA . 1,527 parts In-Stock

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$8.653

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$9.326

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$8.653

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DigiPath Technology Company

USA . 1,276 parts In-Stock

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$9.529

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$8.766

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$9.529

$8.766

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ChromeModa Solutions

Germany . 2,867 parts In-Stock

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$9.723

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$7.973

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2,867

$9.723

$7.973

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IDEA Electronic Components Group

UK . 64 parts In-Stock

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$9.723

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$9.237

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$8.751

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64

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AZTECH Wire

Italy . 849 parts In-Stock

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$12.425

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$12.425

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Microchip USA

USA . 2,019 parts In-Stock

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$31.746

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Lixinc

USA . 9,033 parts In-Stock

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Corphita

USA . 1,020 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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Overview

Elevate your power management solutions with the O3850QDCARQ1 by Texas Instruments. Manufactured with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for automotive applications, this versatile component boasts a range of benefits, including efficient performance, easy installation, and durability. Experience seamless power supply management with the O3850QDCARQ1 - the smart choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term use.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort.

Minimum Output Voltage: 6 V

Suitable for powering various electronic devices that require a minimum output voltage of 6V.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for diverse operating environments.

No. of Channels: 10

Offers multiple channels for different power management tasks, increasing versatility.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Compact design with heat sink and thin profile promotes efficient heat dissipation and space-saving on the board.

Minimum Supply Voltage (Vsup): 2.3 V

Supports low input voltage, ideal for powering sensitive electronic components.

Moisture Sensitivity Level (MSL): 3

With MSL 3 rating, the product can withstand moderately humid conditions, ensuring reliability in various environments.

Width (mm): 6.1 mm

Narrow width allows for installation in tight spaces and compact electronic devices.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards, ensuring robust performance in vehicle applications.

Technical Specifications

Power Management ICs O3850QDCARQ1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

12.5 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

10

No. of Functions:

1

No. of Outputs:

5

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

6 V

Minimum Output Voltage:

6 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

36 V

Minimum Supply Voltage (Vsup):

2.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6.1 mm

Trade Compliance

O3850QDCARQ1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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