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LP2967IBP-1825

Texas Instruments

LP2967IBP-1825 by Texas Instruments

LP2967IBP-1825 by Texas Instruments is a Fixed Positive Multiple Output LDO Regulator with 2 outputs. It offers a Max Dropout Voltage of 0.425 V, operating temperature range from -40 to 125 °C, and a package style of GRID ARRAY. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,279 parts In-Stock

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Digiode

USA . 2,045 parts In-Stock

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Lantek

USA . 1,000 parts In-Stock

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Anansix

USA . 987 parts In-Stock

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One Stop Electronics

USA . 1,548 parts In-Stock

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$2.500

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$2.500

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$3.252

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$2.959

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$2.667

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60

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$2.667

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Parana Technologies

USA . 23 parts In-Stock

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$6.880

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$7.496

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23

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$7.496

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DigiPath Technology Company

USA . 2,201 parts In-Stock

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$7.575

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$6.969

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$7.575

$6.969

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ChromeModa Solutions

Germany . 1,957 parts In-Stock

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$7.730

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$6.339

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IDEA Electronic Components Group

UK . 1,238 parts In-Stock

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$7.730

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$6.957

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AZTECH Wire

Italy . 842 parts In-Stock

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$17.374

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,246 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Overview

Enhance the efficiency and reliability of your electronic devices with the LP2967IBP-1825 by Texas Instruments. Crafted with precision and expertise, this fixed positive multiple output LDO regulator offers seamless power management for various applications. Experience optimal performance and stability with minimal dropout voltage, ensuring consistent output voltage levels. Trust in Texas Instruments' reputation for superior quality and innovation, and elevate your projects with the LP2967IBP-1825. Unlock the full potential of your designs with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Maximum Dropout Voltage-1: 1.425 V

Low dropout voltage ensures efficient regulation of output voltage even when input voltage is close to output voltage.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying assembly.

Operating Temperature (TJ-Max): 125 °C

With a maximum operating temperature of 125°C, this regulator can withstand high temperature environments.

Nominal Output Voltage-2: 2.5 V

Stable output voltage of 2.5V ensures consistent performance of the device powered by this regulator.

Terminal Form: BALL

Ball terminal form provides reliable electrical connection for efficient power delivery.

No. of Terminals: 8

Having 8 terminals allows for multiple connections, enabling the regulator to power multiple components simultaneously.

Maximum Seated Height: 0.85 mm

Low seated height makes it suitable for applications with space constraints.

Technical Specifications

Fixed Regulators - Positive Multiple Output LDO LP2967IBP-1825 attributes and parameters. Explore more Fixed Regulators - Positive Multiple Output LDO devices from Texas Instruments

Specs

Maximum Dropout Voltage-1:

.425 V

Maximum Dropout Voltage-2:

.425 V

Maximum Input Voltage:

16 V

Minimum Input Voltage:

2.8 V

JESD-30 Code:

R-PBGA-B8

Length:

1.946 mm

No. of Functions:

1

No. of Outputs:

2

No. of Terminals:

8

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.15 A

Maximum Output Current-2:

.15 A

Maximum Output Voltage-1:

1.854 V

Minimum Output Voltage-1:

1.746 V

Nominal Output Voltage-1:

1.8 V

Maximum Output Voltage-2:

2.575 V

Minimum Output Voltage-2:

2.425 V

Nominal Output Voltage-2:

2.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.85 mm

Surface Mount:

YES

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Voltage Tolerance:

3 %

Width:

1.412 mm

Trade Compliance

LP2967IBP-1825 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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