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LMX2531LQX1910E/NOPB

Texas Instruments

LMX2531LQX1910E/NOPB by Texas Instruments

LMX2531LQX1910E/NOPB by Texas Instruments is a PLL frequency synthesizer with 36 terminals, operating at 3V. It features a BICMOS technology, industrial temperature grade, and matte tin terminal finish. Ideal for applications requiring precise frequency synthesis in industrial environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,602 parts In-Stock

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Digiode

USA . 1,751 parts In-Stock

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Anansix

USA . 76 parts In-Stock

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One Stop Electronics

USA . 997 parts In-Stock

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$1.500

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997

$1.500

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Parana Technologies

USA . 1,923 parts In-Stock

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$12.672

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$13.136

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DigiPath Technology Company

USA . 1,590 parts In-Stock

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$13.953

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$13.953

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ChromeModa Solutions

Germany . 3,573 parts In-Stock

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$14.238

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$11.675

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$14.238

$11.675

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IDEA Electronic Components Group

UK . 780 parts In-Stock

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$14.238

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$13.526

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$12.814

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780

$14.238

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$12.814

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AZTECH Wire

Italy . 363 parts In-Stock

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$16.545

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Component Stockers USA

USA . 382 parts In-Stock

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$99.990

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Corphita

USA . 4,897 parts In-Stock

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Microchip USA

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Overview

Unlock the power of precise frequency synthesis with the LMX2531LQX1910E/NOPB by Texas Instruments. This innovative Phase Locked Loop (PLL) device offers unparalleled quality and reliability, thanks to the renowned expertise of its manufacturer. Ideal for a wide range of applications, this PLL frequency synthesizer delivers exceptional performance and flexibility. Experience seamless integration and superior functionality with this cutting-edge solution, providing customers with unmatched value and benefits. Elevate your projects with the LMX2531LQX1910E/NOPB and discover limitless possibilities in frequency control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and protection for the internal components of the PLL & Frequency Synthesis Circuits.

Surface Mount: YES

Being surface mount enables easier and more efficient installation on circuit boards, saving space and allowing for a more compact design.

Nominal Supply Voltage (Vsup): 3 V

Operating at a nominal supply voltage of 3V makes this product energy efficient and suitable for a wide range of applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand harsh environmental conditions and ensure reliable performance in demanding applications.

Technology: BICMOS

Utilizing BICMOS technology enhances the performance and efficiency of the PLL & Frequency Synthesis Circuits, making it a reliable and high-quality choice for frequency synthesis applications.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2531LQX1910E/NOPB attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

46 mA

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LMX2531LQX1910E/NOPB Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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