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LMX2531LQX1742/NOPB

Texas Instruments

LMX2531LQX1742/NOPB by Texas Instruments

LMX2531LQX1742/NOPB by Texas Instruments is a PLL frequency synthesizer with a max output frequency of 3132 GHz. Operating at 3V, it has 36 terminals in a square package suitable for industrial applications. With BICMOS technology and a terminal pitch of 0.5mm, it offers precise frequency synthesis capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,554 parts In-Stock

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Digiode

USA . 2,569 parts In-Stock

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Anansix

USA . 1,086 parts In-Stock

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1,086

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$3.250

100+ parts

$2.958

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$2.665

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200

$3.250

$2.958

$2.665

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Parana Technologies

USA . 102 parts In-Stock

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$3.343

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$3.867

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102

$3.343

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$3.867

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DigiPath Technology Company

USA . 883 parts In-Stock

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$3.681

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883

$3.681

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ChromeModa Solutions

Germany . 2,812 parts In-Stock

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$3.756

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$3.080

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$3.756

$3.080

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IDEA Electronic Components Group

UK . 2,110 parts In-Stock

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$3.756

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$3.380

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One Stop Electronics

USA . 1,122 parts In-Stock

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$6.500

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$6.500

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AZTECH Wire

Italy . 809 parts In-Stock

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$10.609

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809

$10.609

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Lixinc

USA . 7,475 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Corphita

USA . 1,384 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the LMX2531LQX1742/NOPB by Texas Instruments. As a leader in Phase Locked Loops (PLL) & Frequency Synthesis Circuits, Texas Instruments offers unparalleled quality and reliability. This versatile chip carrier features a wide operating temperature range, low power consumption, and high output frequency, making it ideal for industrial applications. Elevate your projects with the cutting-edge technology and performance of the LMX2531LQX1742/NOPB.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, cost-effective, and provides good electrical insulation, making the product durable and suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving space and enhancing the overall performance of the product.

Nominal Supply Voltage (Vsup): 3 V

The low nominal supply voltage of 3 V helps in reducing power consumption and heat dissipation, making the product energy-efficient and reliable.

Maximum Output Frequency: 3132 GHz

The high maximum output frequency of 3132 GHz enables the product to generate precise and stable frequency signals for a wide range of applications, making it versatile and high-performing.

Technology: BICMOS

The Bipolar-CMOS technology used in the product combines the advantages of both bipolar and CMOS technologies, offering high speed, low power consumption, and improved noise immunity, ensuring optimal performance and reliability.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2531LQX1742/NOPB attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e3

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Frequency:

3132 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

49 mA

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

LMX2531LQX1742/NOPB Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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