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LMX2332UTM

Texas Instruments

LMX2332UTM by Texas Instruments

LMX2332UTM by Texas Instruments is a PLL frequency synthesizer with 20 terminals, operating at 3V. It features a small outline package, suitable for industrial applications with temperature range of -40 to 85°C. This BICMOS technology IC has a max supply current of 3.3mA and supports surface mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,424 parts In-Stock

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Digiode

USA . 1,836 parts In-Stock

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Anansix

USA . 571 parts In-Stock

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One Stop Electronics

USA . 177 parts In-Stock

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$1.500

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Parana Technologies

USA . 652 parts In-Stock

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$15.370

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$15.759

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DigiPath Technology Company

USA . 1,831 parts In-Stock

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$16.925

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$15.571

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ChromeModa Solutions

Germany . 5,831 parts In-Stock

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$17.270

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$14.161

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$17.270

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IDEA Electronic Components Group

UK . 2,039 parts In-Stock

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$17.270

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$16.406

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$15.543

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$17.270

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AZTECH Wire

Italy . 756 parts In-Stock

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$18.555

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Perfect Parts

USA . 4,436 parts In-Stock

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Corphita

USA . 4,156 parts In-Stock

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Microchip USA

USA . 223 parts In-Stock

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Kepictronics

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Assy Fe

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Overview

Unlock precision and reliability with the Texas Instruments LMX2332UTM Phase Locked Loop. Manufactured by a trusted industry leader, this PLL Frequency Synthesizer offers unparalleled performance in a compact package. Ideal for a wide range of applications, this advanced technology ensures seamless frequency synthesis with minimal power consumption. Experience superior quality and value with the LMX2332UTM – your solution for precision frequency control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the internal components of the PLL and frequency synthesis circuit.

Surface Mount: YES

Surface mount capabilities make it easy to integrate this product into a variety of electronic devices and circuit boards.

Nominal Supply Voltage (Vsup): 3 V

Operates at a standard supply voltage, making it compatible with many power sources.

Maximum Operating Temperature: 85 °C

Can operate efficiently in a wide range of temperatures, ensuring reliability in various environments.

Technology: BICMOS

Utilizes BICMOS technology for efficient power consumption and high-speed performance.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2332UTM attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Additional Features:

DUAL MODULUS PRESCALER (RF): 64/65 OR 128/129 AND DUAL MODULUS PRESCALER (IF): 8/9 OR 16/17

Other IC type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e0

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

3.3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

LMX2332UTM Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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