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LMV358QPWRQ1

Texas Instruments

LMV358QPWRQ1 by Texas Instruments

LMV358QPWRQ1 by Texas Instruments is a dual operational amplifier with 9000uV max input offset voltage and 65dB nominal CMRR. Ideal for automotive applications, it operates at -40 to 125 °C with micropower consumption of 0.615mA. Its small outline package makes it suitable for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,474 parts In-Stock

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Digiode

USA . 3,424 parts In-Stock

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Prism Electronics

USA . 72 parts In-Stock

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Parana Technologies

USA . 436 parts In-Stock

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$3.014

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$3.522

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IDEA Electronic Components Group

UK . 845 parts In-Stock

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$3.386

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$3.047

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ChromeModa Solutions

Germany . 483 parts In-Stock

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$3.386

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$2.777

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One Stop Electronics

USA . 355 parts In-Stock

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AZTECH Wire

Italy . 459 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Metaverse IC Inc.

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Microchip USA

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DigiPath Technology Company

USA . 9 parts In-Stock

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Overview

Discover the LMV358QPWRQ1 operational amplifier from Texas Instruments, a high-quality component perfect for automotive applications. With its micropower technology and wide temperature range, this op amp offers reliable performance in challenging environments. Trust in Texas Instruments' reputation for excellence in semiconductor manufacturing, and experience the benefits of improved signal amplification and precision in your automotive electronics projects. Upgrade to the LMV358QPWRQ1 today for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 9000 uV

The low input offset voltage ensures accurate signal processing and minimal errors in the output signal.

Maximum Average Bias Current (IIB): 0.5 uA

Low bias current helps in reducing power consumption and improves the stability of the operational amplifier.

Surface Mount: YES

Surface mount compatibility allows for easy integration onto PCBs, saving space and simplifying the manufacturing process.

Nominal Common Mode Reject Ratio: 65 dB

A high common mode rejection ratio helps in rejecting noise and interference in the input signal, leading to a cleaner output.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is common and widely available, making it convenient for various applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for reliable performance in a wide range of environmental conditions.

Minimum Voltage Gain: 10000

The high voltage gain ensures amplification of weak input signals with minimal distortion, making it suitable for precision applications.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, making it ideal for demanding applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stable operation and high linearity, ensuring accurate signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LMV358QPWRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1 V/us

Peak Bias Current:

500 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

615 μA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

LMV358QPWRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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