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LMV358IDGKR

Texas Instruments

LMV358IDGKR by Texas Instruments

LMV358IDGKR by Texas Instruments is a dual operational amplifier with a max input offset voltage of 7000 uV and max average bias current of 0.25 uA. It is ideal for automotive applications, offering micropower consumption and a nominal unity gain bandwidth of 1000 kHz. With surface mount capability and small outline package style, it provides high performance in compact designs.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 5 parts In-Stock

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$0.156

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$0.156

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Mouser Electronics

USA . 57 parts In-Stock

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$0.410

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$0.213

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$0.179

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$0.163

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$0.410

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$0.163

Rochester

USA . 99 parts In-Stock

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$0.192

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$0.159

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$0.142

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$0.142

Distributors (In-Stock)

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Digiode

USA . 2,691 parts In-Stock

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$0.145

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Nova Conductors

Japan . 500 parts In-Stock

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$0.233

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Maritex

Poland . 500 parts In-Stock

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$0.780

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Chip Stock

USA . 31,350 parts In-Stock

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Bristol Electronics

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R&J Components

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Vyrian

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Q Components

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Lantek

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Inventory MP

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PC Components Company LLC

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Component Sense

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AGACORP

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Classic Components Corporation

USA . 6 parts In-Stock

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Velocity Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,646 parts In-Stock

1+ parts

$0.130

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$0.130

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Semicontronic

India . 6,646 parts In-Stock

1+ parts

$0.130

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$0.127

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$0.126

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$0.130

$0.127

$0.126

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Corphita

USA . 3,157 parts In-Stock

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$0.138

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Continental Prestige Electronics

USA . 6,101 parts In-Stock

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$0.233

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$0.228

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$0.233

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Argo Parts USA

USA . 95 parts In-Stock

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$0.233

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$0.226

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Netroflash

USA . 50 parts In-Stock

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$0.233

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$0.221

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$0.217

50

$0.233

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$0.217

Modulus Dynamics

Lithuania . 15 parts In-Stock

1+ parts

$0.259

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$0.256

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$0.248

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15

$0.259

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$2.431

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$2.309

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$2.309

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Corohmni

South Africa . 739 parts In-Stock

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$5.406

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Parana Technologies

USA . 1,994 parts In-Stock

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$5.595

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$6.386

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DigiPath Technology Company

USA . 2,333 parts In-Stock

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$6.161

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$5.668

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ChromeModa Solutions

Germany . 2,694 parts In-Stock

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$6.287

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$5.155

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IDEA Electronic Components Group

UK . 1,444 parts In-Stock

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$6.287

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$5.658

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Infinite Electronics LLP (Excess)

. 63,502 parts In-Stock

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Metaverse IC Inc.

Canada . 48,928 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,674 parts In-Stock

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Lixinc

USA . 19,943 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 7,355 parts In-Stock

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Kepictronics

USA . 2,642 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Robosynatics

Brazil . 2,000 parts In-Stock

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$1.315

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$1.315

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$1.315

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$1.315

$1.315

$1.315

Lucentia Tech

USA . 2,000 parts In-Stock

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$1.315

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$1.315

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$1.315

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$1.315

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$1.315

A-Z Elektronik GmbH

Germany . 1,530 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,020 parts In-Stock

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Overview

Experience next-level performance with the LMV358IDGKR operational amplifier by Texas Instruments. Built with precision and reliability, this op amp is designed to excel in a variety of applications. Whether you're working on automotive systems or industrial controls, this high-quality component offers unmatched value and benefits. Trust Texas Instruments to deliver cutting-edge technology that meets all your needs. Elevate your projects with the LMV358IDGKR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accuracy in signal processing and reduces errors in the output.

Maximum Average Bias Current (IIB): 0.25 uA

Low bias current ensures minimal power consumption and helps in maintaining stable operation.

Surface Mount: YES

Easier and quicker installation on circuit boards, saving time and effort during assembly.

No. of Functions: 2

Provides versatility and flexibility in circuit design, enabling multiple functions in a single component.

Package Shape: SQUARE

Compact square shape allows for efficient use of space on the circuit board.

Nominal Common Mode Reject Ratio: 65 dB

High common mode rejection ratio reduces interference from external signals, ensuring clean and accurate output.

Nominal Supply Voltage / Vsup (V): 2.7

Low supply voltage requirement makes the product suitable for low power applications.

Power Supplies (V): 3/5

Flexibility in power supply options allows for compatibility with a variety of systems.

No. of Terminals: 8

Sufficient number of terminals for connecting input and output signals, providing connectivity options for various configurations.

Maximum Input Offset Current (IIO): 0.05 uA

Low input offset current ensures accurate signal processing and reduces errors in the output.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style with a thin profile allows for space-saving on the circuit board.

Maximum Supply Voltage Limit: 5.5 V

Wide supply voltage range provides flexibility for different voltage requirements in applications.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in harsh environmental conditions.

Maximum Bias Current (IIB) @25°C: 0.25 uA

Low bias current at standard operating temperature maintains stable operation and ensures accuracy in signal processing.

Frequency Compensation: YES

Frequency compensation improves stability and bandwidth of the operational amplifier, enhancing overall performance.

Minimum Voltage Gain: 10000

High minimum voltage gain ensures amplification of input signals without distortion, making it suitable for various applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions without compromising performance.

Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

High-quality terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for multiple connection options.

Maximum Seated Height: 1.1 mm

Low seated height allows for compact design and efficient use of space on the circuit board.

Width: 3 mm

Compact width ensures efficient use of space on the circuit board, ideal for compact electronic devices.

Micropower: YES

Micropower design enables low power consumption, extending battery life in portable devices.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering during assembly process.

Length: 3 mm

Compact length ensures efficient use of space on the circuit board, ideal for compact electronic devices.

Temperature Grade: AUTOMOTIVE

Certified automotive grade ensures reliability and performance under demanding automotive applications.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth allows for signal amplification without distortion, suitable for high-frequency applications.

Minimum Common Mode Reject Ratio: 50 dB

Decent common mode rejection ratio minimizes interference from external signals, ensuring clean output.

Technology: BIPOLAR

Bipolar technology offers high performance and low noise in signal processing applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure connection and easy soldering during assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier design offers high gain and precision in signal processing applications.

Maximum Supply Current: 0.44 mA

Low maximum supply current ensures minimal power consumption, suitable for low-power applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture ensures stability and accuracy in signal processing applications.

Packing Method: TR

TR (tape and reel) packing method allows for easy handling and automation during assembly process.

Nominal Slow Rate: 1 V/us

Low slow rate ensures gradual response to input signals, preventing overshoot and instability.

Terminal Pitch: 0.65 mm

Narrow terminal pitch allows for high-density mounting on circuit boards, ideal for compact designs.

Moisture Sensitivity Level (MSL): 2

Moisture sensitivity level 2 ensures safe and reliable operation in humid environments.

Technical Specifications

Operational Amplifiers (Op Amps) LMV358IDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

65 dB

Minimum Common Mode Rejection Ratio (CMRR ):

50 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1 V/us

Maximum Input Offset Current (IIO):

50 nA

Peak Bias Current:

250 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

440 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold/Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LMV358IDGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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