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LMV344IPWG4

Texas Instruments

LMV344IPWG4 by Texas Instruments

LMV344IPWG4 by Texas Instruments is a CMOS operational amplifier with low bias current (0.003 uA) and micropower feature. It operates at a wide temperature range (-40 to 125 °C) making it suitable for automotive applications. With a nominal unity gain bandwidth of 1000 kHz, it offers high performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,967 parts In-Stock

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Digiode

USA . 2,363 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,642 parts In-Stock

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$3.410

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$3.410

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Parana Technologies

USA . 1,401 parts In-Stock

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$5.065

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$5.633

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$5.065

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DigiPath Technology Company

USA . 846 parts In-Stock

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$5.577

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$5.131

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846

$5.577

$5.131

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ChromeModa Solutions

Germany . 650 parts In-Stock

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$5.691

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$4.667

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650

$5.691

$4.667

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IDEA Electronic Components Group

UK . 492 parts In-Stock

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$5.691

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$5.122

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492

$5.691

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$5.122

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AZTECH Wire

Italy . 315 parts In-Stock

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$15.161

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Component Stockers USA

USA . 527 parts In-Stock

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$99.990

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Corphita

USA . 4,693 parts In-Stock

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Overview

Experience superior performance and reliability with the Texas Instruments LMV344IPWG4 operational amplifier. Designed with precision and quality in mind, this amplifier offers unparalleled value and benefits to customers across various applications. Whether you're looking for enhanced signal processing or improved circuit design, the LMV344IPWG4 delivers exceptional results with its low-bias, micropower technology. Trust in Texas Instruments' reputation for excellence and choose the LMV344IPWG4 for all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the operational amplifier, ensuring durability and reliability.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage allows for accurate signal processing and minimizes errors in the output.

Maximum Average Bias Current (IIB): 0.003 uA

Low bias current helps in minimizing power consumption and improving overall efficiency of the operational amplifier.

Surface Mount: YES

Surface mount packaging enables easy and efficient integration onto PCBs, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 86 dB

High common mode rejection ratio ensures that the operational amplifier can effectively reject noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 2.7

Low supply voltage requirement makes this operational amplifier suitable for low power applications.

Frequency Compensation: YES

Frequency compensation feature helps in stabilizing the operational amplifier and preventing oscillations, ensuring reliable performance.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making this operational amplifier suitable for battery-powered devices and noise-sensitive applications.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth allows for high-speed signal processing, making this operational amplifier suitable for applications requiring quick response times.

Architecture: VOLTAGE-FEEDBACK

Voltage feedback architecture ensures stable operation and good linearity, making this operational amplifier suitable for precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) LMV344IPWG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

86 dB

Minimum Common Mode Rejection Ratio (CMRR ):

56 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

1580

Nominal Slew Rate:

1 V/us

Peak Bias Current:

3 nA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

800 μA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

LMV344IPWG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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