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LMV344IDG4

Texas Instruments

LMV344IDG4 by Texas Instruments

LMV344IDG4 by Texas Instruments is a CMOS operational amplifier with low bias current (0.003 uA) and micropower feature. It operates at a wide temperature range (-40 to 125 °C) making it suitable for automotive applications. With a nominal unity gain bandwidth of 1000 kHz, it offers high performance in compact small outline package (8.65mm x 3.9mm).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,977 parts In-Stock

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4,977

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Digiode

USA . 3,303 parts In-Stock

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3,303

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Distributors (Availability)

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Parana Technologies

USA . 238 parts In-Stock

1+ parts

$4.154

100+ parts

-

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$4.598

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238

$4.154

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$4.598

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ChromeModa Solutions

Germany . 3,716 parts In-Stock

1+ parts

$4.667

100+ parts

$3.827

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3,716

$4.667

$3.827

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IDEA Electronic Components Group

UK . 1,709 parts In-Stock

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$4.667

100+ parts

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$4.200

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1,709

$4.667

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$4.200

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One Stop Electronics

USA . 1,163 parts In-Stock

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$7.410

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1,163

$7.410

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AZTECH Wire

Italy . 340 parts In-Stock

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$7.977

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340

$7.977

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Corphita

USA . 3,172 parts In-Stock

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3,172

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Microchip USA

USA . 2,510 parts In-Stock

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2,510

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DigiPath Technology Company

USA . 743 parts In-Stock

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$4.208

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743

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$4.208

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Overview

Experience superior performance and reliability with the Texas Instruments LMV344IDG4 operational amplifier. Manufactured by a trusted industry leader, this op amp is versatile and ideal for a wide range of applications. With its low bias current, micropower capabilities, and high voltage gain bandwidth, this compact and efficient component delivers exceptional value and benefits to customers. Whether you're designing automotive systems, industrial equipment, or consumer electronics, trust the LMV344IDG4 to exceed your expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the components inside, making the product reliable for long-term use.

Maximum Input Offset Voltage: 4500 uV

The low input offset voltage ensures accuracy in signal processing, making the product suitable for precision applications.

Surface Mount: YES

Surface mount configuration allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Supply Voltage / Vsup (V): 2.7

The low nominal supply voltage allows for energy-efficient operation, making the product suitable for low-power applications.

Frequency Compensation: YES

Frequency compensation ensures stability and performance across a range of frequencies, making the product versatile for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product ideal for battery-operated devices and noise-sensitive applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for high gain and precise signal processing, making it suitable for amplification and filtering tasks.

Technical Specifications

Operational Amplifiers (Op Amps) LMV344IDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

56 dB

Input Offset Voltage Limit:

4500 uV

Minimum Voltage Gain:

1580

Nominal Slew Rate:

1 V/us

Peak Bias Current:

3 nA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

800 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LMV344IDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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