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LMH2100TM

Texas Instruments

LMH2100TM by Texas Instruments

LMH2100TM by Texas Instruments is a RF/Microwave Detector with 10 dBm CW input power, 50 ohm impedance, and 50-4000 MHz frequency range. It operates b/w -40 to 85 °C and is ideal for linear detection applications due to its high-frequency capabilities.

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4

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1k+

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Vyrian

USA . 6,682 parts In-Stock

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Digiode

USA . 2,353 parts In-Stock

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Prism Electronics

USA . 1,182 parts In-Stock

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Anansix

USA . 935 parts In-Stock

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Parana Technologies

USA . 39 parts In-Stock

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$2.036

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$2.559

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DigiPath Technology Company

USA . 422 parts In-Stock

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$2.242

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$2.063

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ChromeModa Solutions

Germany . 4,710 parts In-Stock

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$2.288

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$1.876

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IDEA Electronic Components Group

UK . 2,311 parts In-Stock

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$2.288

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$2.059

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AZTECH Wire

Italy . 812 parts In-Stock

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$7.205

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One Stop Electronics

USA . 271 parts In-Stock

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$37.000

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Corphita

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Perfect Parts

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Kepictronics

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Overview

Discover the LMH2100TM by Texas Instruments, a top-of-the-line RF/Microwave Detector that sets new standards in quality and performance. With a maximum input power of 10 dBm and a wide operating frequency range from 50 MHz to 4000 MHz, this linear detector is perfect for a variety of applications. Experience the precision and reliability of Texas Instruments' innovative technology, offering customers unrivaled value and benefits. Upgrade your projects with the LMH2100TM and unlock endless possibilities in the world of RF and microwave technology.

Feature Benefit Bullets

Maximum Input Power (CW): 10 dBm

This product can handle high input power levels of up to 10 dBm, making it suitable for a wide range of applications without the risk of damage.

Construction: COMPONENT

The use of high-quality components ensures reliability and durability, making this product a long-lasting and efficient option.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can withstand high temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40°C makes this product suitable for use in a wide range of environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance, ensuring high performance and longevity.

RF or Microwave Device Type: LINEAR DETECTOR

Being a linear detector allows for accurate and precise detection of RF or microwave signals, making this product ideal for applications requiring high sensitivity.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this product is compatible with standard RF systems, providing seamless integration and reliable performance.

Minimum Operating Frequency: 50 MHz

The ability to operate at a minimum frequency of 50 MHz enables this product to detect a wide range of RF signals, making it versatile for various applications.

Maximum Operating Frequency: 4000 MHz

With a maximum operating frequency of 4000 MHz, this product can detect high-frequency RF signals, making it suitable for advanced communication systems and applications.

Technical Specifications

RF/Microwave Detectors LMH2100TM attributes and parameters. Explore more RF/Microwave Detectors devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e1

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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