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NCS5021SQL

Onsemi

NCS5021SQL by Onsemi

NCS5021SQL by Onsemi is a RF/Microwave Detector with max input power of 23 dBm, VSWR of 2, and operating frequency range from 200 MHz to 2500 MHz. It is a linear detector suitable for applications requiring precise RF signal detection in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 220 parts In-Stock

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Vyrian

USA . 162 parts In-Stock

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TANS Electronics

Latvia . 7,503 parts In-Stock

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SupplyDigital Components

Austria . 3,413 parts In-Stock

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Corphita

USA . 2,196 parts In-Stock

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Kulean Microsystems

USA . 2,110 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Problanco Electronics

Mexico . 78 parts In-Stock

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Overview

Elevate your RF/Microwave detector game with the NCS5021SQL by Onsemi. Crafted with precision and quality by a trusted manufacturer, this linear detector offers unparalleled performance in a wide range of applications. Whether you're in telecommunications, radar systems, or electronic warfare, this component is designed to handle it all with ease. Experience the value of reliability and efficiency with the NCS5021SQL, where superior technology meets customer satisfaction. Elevate your projects today with Onsemi's top-of-the-line detector.

Feature Benefit Bullets

Maximum Input Power (CW): 23 dBm

High maximum input power allows for reliable detection of strong RF/microwave signals without damage to the detector.

Maximum Voltage Standing Wave Ratio: 2

Low VSWR indicates good impedance matching and minimal signal loss, leading to accurate detection of RF/microwave signals.

Construction: COMPONENT

Component construction ensures durability and reliability in various applications.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for stable performance in different environmental conditions.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature enables operation in cold environments without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and conductivity for easy integration into circuits.

RF or Microwave Device Type: LINEAR DETECTOR

Linear detectors offer precise and accurate detection of RF/microwave signals over a wide frequency range.

Characteristic Impedance: 50 ohm

Standard 50 ohm impedance ensures compatibility with common RF/microwave systems and components.

Minimum Operating Frequency: 200 MHz

Low minimum operating frequency allows for detection of a wide range of RF/microwave signals.

Maximum Operating Frequency: 2500 MHz

High maximum operating frequency enables detection of signals in the microwave frequency range, making it suitable for various applications.

Technical Specifications

RF/Microwave Detectors NCS5021SQL attributes and parameters. Explore more RF/Microwave Detectors devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

23 dBm

JESD-609 Code:

e0

Maximum Operating Frequency:

2500 MHz

Minimum Operating Frequency:

200 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin/Lead (Sn/Pb)

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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