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NCS5000SNT1

Onsemi

NCS5000SNT1 by Onsemi

NCS5000SNT1 by Onsemi is a RF/Microwave Detector with max input power of 28 dBm, operating freq range of 100-2000 MHz, and impedance of 50 ohm. It is a threshold detector ideal for applications requiring positive output polarity in temperature range -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,235 parts In-Stock

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Component Sense

UK . 1,990 parts In-Stock

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Digiode

USA . 1,536 parts In-Stock

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AZTECH Wire

Italy . 891 parts In-Stock

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$19.860

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Component Stockers USA

USA . 736 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 8,257 parts In-Stock

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Kulean Microsystems

USA . 6,404 parts In-Stock

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TANS Electronics

Latvia . 6,209 parts In-Stock

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Corphita

USA . 1,972 parts In-Stock

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Problanco Electronics

Mexico . 1,019 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Overview

Unleash the power of precision with the NCS5000SNT1 by Onsemi, a cutting-edge RF/Microwave Detector that sets the standard for quality and performance. Manufactured by a trusted industry leader, this component offers unparalleled reliability and accuracy in a wide range of applications. From telecommunications to aerospace, this threshold detector delivers exceptional value, providing customers with precise measurements and optimal signal detection capabilities. Elevate your projects to new heights with the NCS5000SNT1 - the ultimate solution for all your RF and microwave needs.

Feature Benefit Bullets

Maximum Input Power (CW) 28 dBm

High maximum input power allows for reliable operation without risk of damage from strong signals.

Construction

Being a component allows for easy integration into existing RF/microwave systems.

Maximum Operating Temperature 85 °C

Can withstand high temperatures, ensuring stable performance in various operating environments.

Minimum Operating Temperature -40 °C

Ability to operate in low temperatures expands usability in diverse climate conditions.

Terminal Finish Tin/Lead (Sn/Pb)

Tin/Lead finish provides good conductivity and solderability for secure connections.

Output Polarity POSITIVE

Positive output polarity simplifies signal processing and integration with other components.

RF or Microwave Device Type THRESHOLD DETECTOR

Threshold detector type enables precise signal detection and measurement for accurate performance.

Characteristic Impedance 50 ohm

Standard impedance allows for easy matching with other 50 ohm components, minimizing signal loss.

Minimum Operating Frequency 100 MHz

Low minimum operating frequency enables detection of a wide range of RF/microwave signals.

Maximum Operating Frequency 2000 MHz

High maximum operating frequency allows for detection of signals up to 2000 MHz, suitable for various applications.

Technical Specifications

RF/Microwave Detectors NCS5000SNT1 attributes and parameters. Explore more RF/Microwave Detectors devices from Onsemi

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

28 dBm

JESD-609 Code:

e0

Maximum Operating Frequency:

2000 MHz

Minimum Operating Frequency:

100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

POSITIVE

RF or Microwave Device Type:

Terminal Finish:

Tin/Lead (Sn/Pb)

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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