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LM218JG

Texas Instruments

LM218JG by Texas Instruments

LM218JG by Texas Instruments is an Operational Amplifier with a max input offset voltage of 6000 uV and a nominal unity gain bandwidth of 15000 kHz. It operates at temperatures ranging from -25 to 85 °C and has a supply voltage of +-5/+-20 V, making it ideal for precision signal processing in various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,344 parts In-Stock

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Digiode

USA . 3,362 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 120 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 27 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1 parts In-Stock

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One Stop Electronics

USA . 1,615 parts In-Stock

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$1.410

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$1.410

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Parana Technologies

USA . 907 parts In-Stock

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$6.479

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$7.225

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907

$6.479

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$7.225

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ChromeModa Solutions

Germany . 6,862 parts In-Stock

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$7.280

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$5.970

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$7.280

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IDEA Electronic Components Group

UK . 1,599 parts In-Stock

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$7.280

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$6.552

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$7.280

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AZTECH Wire

Italy . 4,344 parts In-Stock

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$7.870

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$7.560

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$7.410

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$7.260

4,344

$7.870

$7.560

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$7.260

Lixinc

USA . 10,201 parts In-Stock

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Corphita

USA . 4,999 parts In-Stock

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DigiPath Technology Company

USA . 1,431 parts In-Stock

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$6.564

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Kepictronics

USA . 571 parts In-Stock

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Assy Fe

Spain . 30 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the LM218JG operational amplifier by Texas Instruments. Crafted with precision and expertise, this versatile op amp offers exceptional functionality for a wide range of applications. From audio equipment to medical devices, the LM218JG delivers unmatched quality, stability, and precision. Trust in Texas Instruments to provide you with the best-in-class components that will elevate your designs and projects to new heights. Choose the LM218JG for superior performance and unrivaled value.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides durability and protection for the internal components of the operational amplifier, ensuring longevity and reliability.

Maximum Input Offset Voltage: 6000 uV

Low input offset voltage helps minimize errors in signal processing, making this operational amplifier suitable for precision applications.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio indicates the amplifier's ability to reject noise and interference, resulting in clean and accurate signal processing.

Nominal Supply Voltage / Vsup (V): 15

With a nominal supply voltage of 15V, this operational amplifier can be easily integrated into various circuits and power supply setups.

Nominal Unity Gain Bandwidth: 15000 kHz

The high unity gain bandwidth allows for fast signal processing and high-frequency operation, making this amplifier ideal for applications requiring quick response times.

Technical Specifications

Operational Amplifiers (Op Amps) LM218JG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±5/±20 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

15 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

6000 uV

Nominal Slew Rate:

70 V/us

Peak Bias Current:

500 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Negative Supply Voltage:

-15 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

8 mA

Physical Characteristics

Length:

0.378 in (9.6 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-GDIP-T8

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LM218JG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-113-0831, 5962011130831, 5962-01-381-8883, 5962013818883

NIIN

011130831, 013818883

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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