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LM111JG

Texas Instruments

LM111JG by Texas Instruments

LM111JG by Texas Instruments is a ceramic, glass-sealed comparator with 4000uV max input offset voltage and 0.15uA max average bias current. It operates at -55 to 125 °C, ideal for military applications requiring fast response time of 115ns. With open-collector output type and through-hole terminal form, it offers precise performance in harsh environments.

Median Price

$26.416

Lifecycle Status

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1k+

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Texas Instruments

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Arrow

USA . 6 parts In-Stock

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$26.416

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$22.965

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$22.356

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UK . 8 parts In-Stock

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$36.886

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Digiode

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TME

Poland . 16 parts In-Stock

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Vyrian

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LWI Electronics Inc

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ComSIT Distribution GmbH

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Bristol Electronics

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Corel Iberica Componentes, S.L.

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Mil-Aero Solutions, Inc.

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Prism Electronics

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Holdelec - ElecDif-Pro

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Resion

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Electronic Expediters

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Parana Technologies

USA . 2,169 parts In-Stock

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$3.580

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$332.501

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$3.222

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DigiPath Technology Company

USA . 1,418 parts In-Stock

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$3.943

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ChromeModa Solutions

Germany . 5,623 parts In-Stock

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$4.023

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$3.299

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IDEA Electronic Components Group

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Component Stockers USA

USA . 3,273 parts In-Stock

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$9.910

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AZTECH Wire

Italy . 547 parts In-Stock

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Corphita

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Lixinc

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Microchip USA

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Alle Elektronik GmbH

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Overview

Looking for top-notch quality and reliability in your comparators? Look no further than the LM111JG by Texas Instruments. With a reputation for excellence in manufacturing, Texas Instruments delivers a product that exceeds expectations. Perfect for a wide range of applications, this comparator offers unparalleled value and benefits to customers. Experience the advantages of precision performance and dependable functionality with the LM111JG - the ultimate choice for all your comparator needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed package body material provides durability and protection for the comparator, making it suitable for harsh environments.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accurate comparison between two input signals, making this comparator ideal for precision applications.

Nominal Supply Voltage / Vsup (V): 15

Stable nominal supply voltage of 15V ensures consistent and reliable performance of the comparator.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the comparator to operate in a wide range of environments without compromising performance.

Output Type: OPEN-COLLECTOR; OPEN-DRAIN

The open-collector and open-drain output types provide flexibility in interfacing with other components in a circuit, making this comparator versatile in various applications.

Technology: BIPOLAR

Bipolar technology offers low noise and high speed operation, making this comparator suitable for applications requiring fast response times and precision.

Technical Specifications

Comparators LM111JG attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Open-Collector, Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

4 mV

Peak Bias Current:

150 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Maximum Supply Current:

6 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

115 ns

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Type:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

LM111JG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-086-4490, 5962010864490

NIIN

010864490

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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