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LF412CDG4

Texas Instruments

LF412CDG4 by Texas Instruments

LF412CDG4 by Texas Instruments is a BIFET operational amplifier with 3000 kHz unity gain bandwidth, 15000 min voltage gain, and 100 dB common mode reject ratio. Ideal for applications requiring low-bias current amplification in commercial temperature environments. Package style: small outline, surface mountable with dual terminals.

Median Price

$1.700

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 584 parts In-Stock

1+ parts

$1.700

100+ parts

$1.220

1k+ parts

$1.000

10k+ parts

$0.748

584

$1.700

$1.220

$1.000

$0.748

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,515 parts In-Stock

1+ parts

$1.615

100+ parts

-

1k+ parts

-

10k+ parts

-

2,515

$1.615

-

-

-

Vyrian

USA . 8,961 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,961

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 437 parts In-Stock

1+ parts

$1.530

100+ parts

-

1k+ parts

-

10k+ parts

-

437

$1.530

-

-

-

Component Stockers USA

USA . 431 parts In-Stock

1+ parts

$1.640

100+ parts

$1.170

1k+ parts

-

10k+ parts

-

431

$1.640

$1.170

-

-

Parana Technologies

USA . 826 parts In-Stock

1+ parts

$3.419

100+ parts

$317.541

1k+ parts

$3.077

10k+ parts

-

826

$3.419

$317.541

$3.077

-

DigiPath Technology Company

USA . 2,179 parts In-Stock

1+ parts

$3.765

100+ parts

-

1k+ parts

-

10k+ parts

-

2,179

$3.765

-

-

-

IDEA Electronic Components Group

UK . 1,701 parts In-Stock

1+ parts

$3.842

100+ parts

-

1k+ parts

$3.458

10k+ parts

-

1,701

$3.842

-

$3.458

-

ChromeModa Solutions

Germany . 797 parts In-Stock

1+ parts

$3.842

100+ parts

$3.150

1k+ parts

-

10k+ parts

-

797

$3.842

$3.150

-

-

Microchip USA

USA . 5,141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,141

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Overview

Experience superior performance and reliability with the LF412CDG4 operational amplifier by Texas Instruments. Designed with cutting-edge BIFET technology, this high-quality component offers unmatched precision and low bias for a wide range of applications. From audio equipment to industrial automation, this amplifier provides exceptional unity gain bandwidth and common-mode rejection ratio, ensuring optimal signal integrity. Trust in Texas Instruments to deliver top-notch components that exceed expectations and elevate your projects to new heights. Choose LF412CDG4 for unparalleled value and performance.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the operational amplifier.

Maximum Input Offset Voltage - 3000 uV

Low input offset voltage allows for accurate signal processing and minimal error in the output.

Maximum Average Bias Current (IIB) - 0.0002 uA

Low bias current ensures minimal power consumption and stable operation of the operational amplifier.

Surface Mount - YES

Facilitates easy and convenient assembly onto circuit boards, saving time and effort during production.

Nominal Common Mode Reject Ratio - 100 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the input signal, resulting in a cleaner output.

Maximum Supply Voltage Limit - 18 V

Wide supply voltage range allows for flexibility in different operating conditions and power supply configurations.

Minimum Voltage Gain - 15000

High voltage gain amplifies the input signal significantly, making it suitable for applications that require precision and accuracy.

Nominal Unity Gain Bandwidth - 3000 kHz

High unity gain bandwidth ensures efficient signal amplification and responsiveness, making it ideal for high-frequency applications.

Technical Specifications

Operational Amplifiers (Op Amps) LF412CDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIFET

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

15000

Minimum Slew Rate:

8 V/us

Nominal Slew Rate:

13 V/us

Maximum Input Offset Current (IIO):

100 pA

Peak Bias Current:

200 pA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

6.8 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LF412CDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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