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HPA00141AIDCKG4

Texas Instruments

HPA00141AIDCKG4 by Texas Instruments

The Texas Instruments HPA00141AIDCKG4 is a CMOS Operational Amplifier with 10uV Max Input Offset Voltage, 130dB Nominal CMRR, and 350kHz Unity Gain Bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,805 parts In-Stock

1+ parts

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3,805

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Digiode

USA . 3,326 parts In-Stock

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3,326

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Nova Conductors

Japan . 90 parts In-Stock

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90

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Distributors (Availability)

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Ampacity Inc.

Singapore . 565 parts In-Stock

1+ parts

$0.410

100+ parts

-

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565

$0.410

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Corohmni

South Africa . 186 parts In-Stock

1+ parts

$2.383

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186

$2.383

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Parana Technologies

USA . 2,233 parts In-Stock

1+ parts

$4.799

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$5.307

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2,233

$4.799

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$5.307

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ChromeModa Solutions

Germany . 6,207 parts In-Stock

1+ parts

$5.392

100+ parts

$4.421

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6,207

$5.392

$4.421

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IDEA Electronic Components Group

UK . 997 parts In-Stock

1+ parts

$5.392

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$4.853

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997

$5.392

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$4.853

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Semicontronic

India . 838 parts In-Stock

1+ parts

$8.410

100+ parts

$8.200

1k+ parts

$8.158

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838

$8.410

$8.200

$8.158

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One Stop Electronics

USA . 484 parts In-Stock

1+ parts

$8.410

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484

$8.410

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AZTECH Wire

Italy . 447 parts In-Stock

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$17.995

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447

$17.995

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Continental Prestige Electronics

USA . 5,738 parts In-Stock

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5,738

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Argo Parts USA

USA . 1,604 parts In-Stock

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Corphita

USA . 911 parts In-Stock

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911

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DigiPath Technology Company

USA . 476 parts In-Stock

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$4.861

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476

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$4.861

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Elevate your electronic designs with the HPA00141AIDCKG4 by Texas Instruments, a top-of-the-line Operational Amplifier that guarantees precision and reliability. Crafted by the renowned manufacturer Texas Instruments, this amplifier boasts a wide range of applications, making it a versatile choice for various projects. With its compact design and advanced technology, this product offers unmatched performance and efficiency. Say goodbye to subpar amplifiers and experience superior quality with the HPA00141AIDCKG4. Unlock endless possibilities and take your projects to the next level with this exceptional amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the operational amplifier, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 10 uV

Low input offset voltage ensures accuracy in signal processing, making this operational amplifier ideal for precision applications.

Nominal Common Mode Reject Ratio: 130 dB

High common mode rejection ratio helps in rejecting noise and interference, improving signal quality in the circuit.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard supply voltage of 5V, making it compatible with many power sources.

Maximum Operating Temperature: 125 °C

With a wide operating temperature range, this operational amplifier can function reliably in various environmental conditions.

Nominal Unity Gain Bandwidth: 350000 kHz

High unity gain bandwidth ensures high-speed signal processing, making it suitable for fast response applications.

Technical Specifications

Operational Amplifiers (Op Amps) HPA00141AIDCKG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

350 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Input Offset Voltage Limit:

10 uV

Nominal Slew Rate:

0.16 V/us

Peak Bias Current:

200 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

HPA00141AIDCKG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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