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HPA00224AIDGKR

Texas Instruments

HPA00224AIDGKR by Texas Instruments

Texas Instruments' HPA00224AIDGKR is a CMOS operational amplifier with 10uV max input offset voltage, 130dB nominal CMRR, and 350kHz unity gain bandwidth. Ideal for automotive applications due to its compact size, low power consumption (0.05mA max supply current), and wide operating temperature range (-40 to 125°C).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,832 parts In-Stock

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Vyrian

USA . 3,072 parts In-Stock

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3,072

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Distributors (Availability)

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Parana Technologies

USA . 961 parts In-Stock

1+ parts

$5.355

100+ parts

-

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$6.026

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961

$5.355

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$6.026

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One Stop Electronics

USA . 1,405 parts In-Stock

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$5.410

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$5.410

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DigiPath Technology Company

USA . 943 parts In-Stock

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$5.897

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$5.425

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943

$5.897

$5.425

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ChromeModa Solutions

Germany . 1,531 parts In-Stock

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$6.017

100+ parts

$4.934

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1,531

$6.017

$4.934

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IDEA Electronic Components Group

UK . 1,303 parts In-Stock

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$6.017

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$5.415

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1,303

$6.017

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$5.415

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AZTECH Wire

Italy . 873 parts In-Stock

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$12.260

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873

$12.260

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Kepictronics

USA . 30,000 parts In-Stock

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Corphita

USA . 2,809 parts In-Stock

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Microchip USA

USA . 1,965 parts In-Stock

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Overview

Experience unparalleled precision and performance with the HPA00224AIDGKR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This operational amplifier offers exceptional value to customers with its versatile applications in automotive technology and beyond. With a compact design and advanced features, this product provides unmatched benefits and advantages to meet all your operational amplifier needs. Elevate your projects with the superior capabilities of the HPA00224AIDGKR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 10 uV

The low maximum input offset voltage ensures accurate and precise signal amplification, making this product ideal for high-precision applications.

Maximum Average Bias Current (IIB): 0.0002 uA

With a low maximum average bias current, this product offers minimal power consumption and helps in maintaining signal integrity.

Surface Mount: YES

The surface mount feature allows for easy and convenient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 130 dB

The high nominal common mode reject ratio ensures effective rejection of unwanted common-mode signals, leading to cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is common and easily accessible, making it compatible with a wide range of applications and power sources.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in harsh environmental conditions, making this product suitable for a variety of industrial applications.

Technology: CMOS

The CMOS technology offers low power consumption and high input impedance, making this product energy-efficient and suitable for battery-powered devices.

Technical Specifications

Operational Amplifiers (Op Amps) HPA00224AIDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

350 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

130 dB

Minimum Common Mode Rejection Ratio (CMRR ):

106 dB

Input Offset Voltage Limit:

10 uV

Nominal Slew Rate:

0.16 V/us

Peak Bias Current:

200 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

50 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

HPA00224AIDGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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