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DLPA3000CPFDR

Texas Instruments

DLPA3000CPFDR by Texas Instruments

LED DISPLAY DRIVER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 2; Maximum Time At Peak Reflow Temperature (s): 30;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,303 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,874 parts In-Stock

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Digiode

USA . 1,320 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,324 parts In-Stock

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$8.678

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$9.358

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$8.678

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DigiPath Technology Company

USA . 881 parts In-Stock

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$9.555

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$8.791

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881

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ChromeModa Solutions

Germany . 5,644 parts In-Stock

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$9.750

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$7.995

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$9.750

$7.995

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IDEA Electronic Components Group

UK . 1,331 parts In-Stock

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$9.750

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$9.262

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$8.775

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$9.750

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$8.775

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AZTECH Wire

Italy . 629 parts In-Stock

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$16.322

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629

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One Stop Electronics

USA . 275 parts In-Stock

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$24.500

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$24.500

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QUARKTWIN TECHNOLOGY LTD

USA . 5,787 parts In-Stock

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Lixinc

USA . 4,767 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,542 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,028 parts In-Stock

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Metaverse IC Inc.

Canada . 2,886 parts In-Stock

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Kepictronics

USA . 2,263 parts In-Stock

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2,263

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Northwest PG Solutions

USA . 1,878 parts In-Stock

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$3.462

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$3.462

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Corphita

USA . 438 parts In-Stock

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438

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Native Components

USA . 366 parts In-Stock

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$3.427

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366

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$3.427

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Microchip USA

USA . 294 parts In-Stock

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294

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Technical Specifications

Graphics Display Drivers DLPA3000CPFDR attributes and parameters. Explore more Graphics Display Drivers devices from Texas Instruments

Specs

Interface IC Type:

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

2

Peak Reflow Temperature (C):

260

Terminal Finish:

NICKEL PALLADIUM GOLD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DLPA3000CPFDR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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