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DAC121S101MDR

Texas Instruments

DAC121S101MDR by Texas Instruments

DAC121S101MDR by Texas Instruments is a 12-bit D/A converter with max output voltage of 5.5V and linearity error of 0.1953%. It operates in military-grade temperature range (-55 to 125°C) and has a sample rate of 1.8 MHz. Ideal for applications requiring high precision analog signal generation in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,727 parts In-Stock

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Digiode

USA . 639 parts In-Stock

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Native Components

USA . 255 parts In-Stock

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$9.880

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$9.880

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One Stop Electronics

USA . 512 parts In-Stock

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$10.000

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Northwest PG Solutions

USA . 2,162 parts In-Stock

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$10.868

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$9.781

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Parana Technologies

USA . 2,173 parts In-Stock

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$16.004

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$16.348

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DigiPath Technology Company

USA . 1,755 parts In-Stock

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$17.622

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AZTECH Wire

Italy . 429 parts In-Stock

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$17.961

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ChromeModa Solutions

Germany . 2,677 parts In-Stock

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$17.982

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$14.745

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IDEA Electronic Components Group

UK . 143 parts In-Stock

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$17.982

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$17.083

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$16.184

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Component Stockers USA

USA . 339 parts In-Stock

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$99.990

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Microchip USA

USA . 973 parts In-Stock

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Corphita

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Overview

Unlock a world of precision with the Texas Instruments DAC121S101MDR Digital-to-Analog Converter. Crafted by industry leader Texas Instruments, this high-quality product offers unparalleled performance and reliability for a wide range of applications. Whether you're working on audio equipment, industrial automation, or telecommunications systems, this converter will deliver exceptional results. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations. Elevate your projects with the DAC121S101MDR and experience the value it brings to your designs.

Feature Benefit Bullets

Maximum Analog Output Voltage: 5.5 V

High maximum analog output voltage allows for a wide range of output levels, making this product suitable for a variety of applications that require precise voltage control.

Surface Mount: YES

Surface mount design makes it easy to integrate this product into PCBs, saving space and facilitating mass production.

No. of Bits: 12

Having 12 bits ensures high resolution and accuracy in converting digital signals to analog, making this product ideal for applications that require fine control over output voltage levels.

Maximum Linearity Error (EL): 0.1953 %

Low linearity error ensures that the analog output closely resembles the digital input, providing accurate and consistent results in various applications.

Package Style: UNCASED CHIP

Uncased chip design offers flexibility in mounting and integration, allowing for customization and adaptation to specific project requirements.

Nominal Settling Time (tstl): 12.5 us

Fast settling time ensures quick response and stability in output voltage changes, making this product suitable for dynamic applications that require rapid adjustments.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range allows this product to be used in harsh environments without compromising performance or reliability.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures this product can function effectively in cold environments, expanding its range of potential applications.

Terminal Position: UPPER

Upper terminal position simplifies connectivity and installation, making it easier to integrate this product into existing systems or designs.

Minimum Analog Output Voltage: 0 V

Having a minimum analog output voltage of 0 V allows this product to reach zero output level, essential for applications that require complete range of control over voltage levels.

Temperature Grade: MILITARY

Military-grade temperature rating ensures durability and reliability in extreme conditions, making this product ideal for mission-critical applications in defense or aerospace industries.

Total Dose (V): 100k Rad(Si)

High total dose rating of 100k Rad(Si) makes this product suitable for applications in high-radiation environments, ensuring long-term performance and stability.

Sample Rate: 1.8 MHz

High sample rate of 1.8 MHz allows for fast and accurate conversion of digital signals to analog, making this product suitable for real-time applications that require high-speed processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of this product in various electronic systems.

Terminal Form: NO LEAD

Lead-free terminal form ensures compliance with environmental regulations and makes this product environmentally friendly and safe for use in sensitive applications.

Input Format: SERIAL

Serial input format facilitates easy integration with digital systems and devices, allowing for seamless communication and control in applications that require serial data transmission.

Converter Type: D/A CONVERTER

Being a digital-to-analog converter, this product effectively converts digital signals into precise analog output, making it essential for various electronic applications that require accurate voltage control.

Nominal Supply Voltage: 3 V

Having a nominal supply voltage of 3 V ensures compatibility with standard power sources, making this product easy to integrate and power in most electronic systems.

Input Bit Code: BINARY

Binary input bit code simplifies the digital-to-analog conversion process, providing a straightforward and efficient method for converting digital signals into analog output voltage.

Technical Specifications

Digital-to-Analog Converters DAC121S101MDR attributes and parameters. Explore more Digital-to-Analog Converters devices from Texas Instruments

Converter Specifications

Technology:

CMOS

Input Format:

Serial

Input Bit Code:

Binary

Maximum Linearity Error (EL):

0.1953 %

Nominal Settling Time (tstl):

12.5 µs

Sample Rate:

1.8 MHz

No. of Bits:

12

No. of Functions:

1

Electrical Specifications

Nominal Supply Voltage:

3 V

Minimum Analog Output Voltage:

0 V

Maximum Analog Output Voltage:

5.5 V

Operating Conditions

Minimum Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Temperature Grade:

Moisture Sensitivity Level (MSL):

1

Total Ionizing Dose:

100k Rad(Si)

Form Factor

Terminal Form:

Terminal Position:

Upper

Surface Mount:

Yes

Packaging

Package Style:

Uncased Chip

Package Code:

DIE

Standards and Codes

JESD-30 Code:

X-XUUC-N

Trade Compliance

DAC121S101MDR Converters trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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