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CD54HC4046AF3A

Texas Instruments

CD54HC4046AF3A by Texas Instruments

CD54HC4046AF3A by Texas Instruments is a Phase Locked Loop (PLL) IC with 16 terminals, operating voltage of 2-6V, and temperature range of -55 to 125°C. It is ideal for military applications requiring CMOS technology for frequency synthesis circuits in a ceramic package.

Median Price

$14.150

Lifecycle Status

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Freelance Electronics

USA . 5 parts In-Stock

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$13.309

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Tomark Electronics Ltd

UK . 192 parts In-Stock

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Odintec Ltd.

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ABC Electronics Ltd.

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ACDS - Activité Composants Distribution Service

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Contempo Components LLC

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Manoshevitz Elec. Sales

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Corel Iberica Componentes, S.L.

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Bristol Electronics

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One Stop Electronics

USA . 438 parts In-Stock

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Parana Technologies

USA . 2,188 parts In-Stock

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$972.295

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Native Components

USA . 640 parts In-Stock

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DigiPath Technology Company

USA . 1,607 parts In-Stock

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ChromeModa Solutions

Germany . 6,104 parts In-Stock

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IDEA Electronic Components Group

UK . 2,099 parts In-Stock

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Northwest PG Solutions

USA . 1,120 parts In-Stock

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Corohmni

South Africa . 602 parts In-Stock

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AZTECH Wire

Italy . 551 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

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Overview

Unlock the power of precision with the CD54HC4046AF3A by Texas Instruments, a top-tier manufacturer renowned for quality and innovation. As a part of the Phase Locked Loops (PLL) & Frequency Synthesis Circuits category, this product offers unparalleled performance and reliability for a wide range of applications. From telecommunications to aerospace, the possibilities are endless with this versatile component. Trust in Texas Instruments to deliver exceptional value and benefits, providing your projects with the competitive edge they need to succeed.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection, ensuring the longevity and reliability of the product.

Nominal Supply Voltage (Vsup): 3 V

Optimal supply voltage for efficient performance and power consumption.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a variety of environments and applications.

Minimum Operating Temperature: -55 °C

Operates reliably in low temperatures, offering versatility for different operating conditions.

Technology: CMOS

Complementary Metal Oxide Semiconductor technology ensures low power consumption and high noise immunity, enhancing the efficiency of the product.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits CD54HC4046AF3A attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

21.34 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

.16 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

CD54HC4046AF3A Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-308-6360, 5962013086360, 5962-01-347-0573, 5962013470573

NIIN

013086360, 013470573

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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