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CD4532BEE4

Texas Instruments

CD4532BEE4 by Texas Instruments

CD4532BEE4 by Texas Instruments is an 8-bit digital arithmetic circuit with a propagation delay of 110 ns at 5V. It operates within a temperature range of -55 to 125°C and has a max power supply current of 3mA. Ideal for military-grade applications requiring fast arithmetic processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,832 parts In-Stock

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Digiode

USA . 903 parts In-Stock

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903

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Bristol Electronics

USA . 7 parts In-Stock

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Andel Nordic

Denmark . 2,548 parts In-Stock

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$5.813

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$5.580

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$5.580

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$5.580

Native Components

USA . 529 parts In-Stock

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$6.357

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529

$6.357

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AZTECH Wire

Italy . 288 parts In-Stock

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$9.240

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288

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One Stop Electronics

USA . 1,625 parts In-Stock

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$14.000

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$14.000

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Parana Technologies

USA . 2,335 parts In-Stock

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$21.958

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$2,039.141

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$19.762

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2,335

$21.958

$2,039.141

$19.762

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DigiPath Technology Company

USA . 878 parts In-Stock

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$24.179

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878

$24.179

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ChromeModa Solutions

Germany . 3,919 parts In-Stock

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$24.672

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$20.231

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3,919

$24.672

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IDEA Electronic Components Group

UK . 1,464 parts In-Stock

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$24.672

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$23.438

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$22.205

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Corphita

USA . 3,081 parts In-Stock

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Microchip USA

USA . 2,502 parts In-Stock

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Northwest PG Solutions

USA . 1,786 parts In-Stock

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Perfect Parts

USA . 1,491 parts In-Stock

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Overview

Elevate your digital arithmetic circuits with the CD4532BEE4 by Texas Instruments. Known for their top-quality products, Texas Instruments delivers reliability and precision in every component. This versatile device is perfect for a wide range of applications, offering customers unmatched value and benefits. Whether you're looking to enhance your electronics projects or streamline your industrial processes, the CD4532BEE4 provides the performance and efficiency you need. Trust Texas Instruments to elevate your circuits to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the internal components of the circuit, making it long-lasting and reliable.

Propagation Delay At Nominal Supply: 110 ns

Low propagation delay ensures fast processing speed, making it suitable for applications requiring quick calculations.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with various systems and power sources.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the circuit to function effectively in different environmental conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the circuit efficient and reliable.

Technical Specifications

Digital Arithmetic Circuits CD4532BEE4 attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Additional Features:

8 TO 3 LINE PRIORITY ENCODER

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

Length:

19.305 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

1.5 Amp

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

3 mA

Propagation Delay At Nominal Supply:

110 ns

Propagation Delay (tpd):

440 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Arithmetic Circuits

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD4532BEE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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