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CD4512BM96G4

Texas Instruments

CD4512BM96G4 by Texas Instruments

CD4512BM96G4 by Texas Instruments is an 8-input multiplexer with a propagation delay of 140ns at 5V. It operates within a temperature range of -55 to 125°C and has a max supply voltage of 18V. This CMOS technology device is ideal for military-grade applications requiring high-speed signal switching in compact spaces.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 4,229 parts In-Stock

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AZTECH Wire

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Parana Technologies

USA . 321 parts In-Stock

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$28.840

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$52.436

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DigiPath Technology Company

USA . 698 parts In-Stock

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$31.756

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$29.215

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IDEA Electronic Components Group

UK . 1,657 parts In-Stock

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$29.164

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ChromeModa Solutions

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$26.571

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Northwest PG Solutions

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Overview

Discover the ultimate solution for your multiplexer & demultiplexer needs with the CD4512BM96G4 by Texas Instruments. This cutting-edge product boasts high-quality manufacturing and top-notch performance, making it perfect for a wide range of applications. From its durable plastic/epoxy package body material to its 8 inputs and 3-state output characteristics, this versatile device offers unmatched value and benefits. Trust Texas Instruments to deliver exceptional products that meet your requirements and exceed your expectations. Choose the CD4512BM96G4 for reliable performance and superior quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external elements, ensuring longevity and reliability.

Propagation Delay At Nominal Supply: 140 ns

Low propagation delay ensures fast switching and efficient performance of the multiplexer/demultiplexer.

Surface Mount: YES

Surface mount capability allows for easy installation and saves space on the PCB.

No. of Inputs: 8

Having 8 inputs provides flexibility and versatility in multiplexing/demultiplexing applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with many existing systems.

Load Capacitance (CL): 50 pF

Suitable load capacitance ensures signal integrity and prevents signal distortion.

Power Supplies (V): 5/15

Supports multiple power supply options, giving flexibility in different system configurations.

No. of Terminals: 16

Sufficient terminals for connection and integration in complex circuit designs.

Maximum I (ol): 1.5 Amp

High output current capability allows for driving heavy loads without external amplification.

Propagation Delay (tpd): 360 ns

Consistent propagation delay ensures reliable signal transmission and synchronization.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes it suitable for harsh environmental conditions.

Output Characteristics: 3-STATE

3-state output enables the device to have high impedance when disabled, useful in bus systems.

Minimum Operating Temperature: -55 °C

Can operate in very low temperature environments, ideal for diverse applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Durable terminal finish ensures good contact and conductivity over time.

Terminal Position: DUAL

Dual terminal positioning provides stability and ease of soldering during assembly.

Maximum Seated Height: 1.75 mm

Low profile design helps in space-constrained applications and compact PCB layouts.

Width: 3.9 mm

Narrow width allows for efficient use of space on the PCB.

Output Polarity: TRUE

True output polarity ensures correct signal representation and compatibility with other components.

Minimum Supply Voltage (Vsup): 3 V

Support for low supply voltage enables operation in battery-powered devices and low-power applications.

Peak Reflow Temperature °C: 260

High reflow temperature capability for lead-free soldering and RoHS compliance.

Length: 9.9 mm

Compact length allows for easy integration in dense PCB layouts.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliability in rugged environments and critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, suitable for various applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and ease of soldering during assembly.

Packing Method: TR

Tape and reel packing for convenient handling, storage, and automated assembly processes.

Terminal Pitch: 1.27 mm

Standard terminal pitch for compatibility with common PCB designs and assembly equipment.

Maximum Supply Voltage (Vsup): 18 V

Support for high supply voltage allows for compatibility with a wide range of system requirements.

Maximum Power Supply Current (ICC): 3 mA

Low power supply current consumption for energy efficiency and longer battery life in portable devices.

Technical Specifications

Multiplexer & Demultiplexer CD4512BM96G4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

1.5 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

1

No. of Inputs:

8

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

3 mA

Propagation Delay At Nominal Supply:

140 ns

Propagation Delay (tpd):

360 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4512BM96G4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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