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CD4086BM96

Texas Instruments

CD4086BM96 by Texas Instruments

CD4086BM96 by Texas Instruments is a CMOS logic gate with 8 inputs, 620 ns propagation delay at 5V. It operates in temperatures from -55 to 125°C and supports supply voltages of 3-18V. Ideal for military-grade applications requiring high-speed signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,506 parts In-Stock

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Digiode

USA . 1,087 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Ampacity Inc.

Singapore . 1,460 parts In-Stock

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$7.000

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Parana Technologies

USA . 2,212 parts In-Stock

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$15.096

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DigiPath Technology Company

USA . 705 parts In-Stock

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AZTECH Wire

Italy . 201 parts In-Stock

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ChromeModa Solutions

Germany . 6,218 parts In-Stock

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$16.962

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$13.909

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IDEA Electronic Components Group

UK . 2,074 parts In-Stock

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$15.266

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One Stop Electronics

USA . 694 parts In-Stock

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$49.000

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Argo Parts USA

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Corphita

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Continental Prestige Electronics

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Bastille Electronics

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Microchip USA

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Overview

Enhance the performance of your electronic devices with the CD4086BM96 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. The CD4086BM96 falls under the Logic Gates category, offering customers seamless integration and efficient operation. With a nominal supply voltage of 5V and a propagation delay of 620ns, this product ensures smooth functionality. Experience the value and benefits of this product in various applications, from consumer electronics to industrial machinery. Upgrade your systems today with the CD4086BM96 for unparalleled performance and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for compact and portable devices.

Propagation Delay At Nominal Supply: 620 ns

With a low propagation delay, the logic gates can process signals quickly, leading to efficient performance.

Surface Mount: YES

The surface mount feature makes it easy to integrate the logic gates onto circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common 5V supply voltage, this product can be easily integrated into various systems and circuits.

Load Capacitance (CL): 50 pF

The load capacitance of 50 pF allows for efficient signal transmission and reception within the circuit.

Technology: CMOS

Being CMOS technology, the logic gates offer low power consumption and high noise immunity, making them suitable for battery-powered devices and noise-sensitive applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the logic gates are suitable for use in harsh environmental conditions without performance degradation.

Technical Specifications

Logic Gates CD4086BM96 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

1

No. of Inputs:

8

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

620 ns

Propagation Delay (tpd):

620 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4086BM96 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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