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CD4070BEE4

Texas Instruments

CD4070BEE4 by Texas Instruments

CD4070BEE4 by Texas Instruments is a CMOS Logic Gates IC with 4 functions and 2 inputs. It operates at a nominal voltage of 5V, with a propagation delay of 280ns. Suitable for military-grade applications requiring high-speed logic operations in compact designs.

Median Price

$1.680

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 597 parts In-Stock

1+ parts

$1.680

100+ parts

$0.651

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597

$1.680

$0.651

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Distributors (In-Stock)

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Digiode

USA . 263 parts In-Stock

1+ parts

$0.760

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-

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263

$0.760

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Vyrian

USA . 5,364 parts In-Stock

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5,364

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LIBRA Elektronik GmbH

Germany . 17 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 4,676 parts In-Stock

1+ parts

$0.720

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4,676

$0.720

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Parana Technologies

USA . 2,175 parts In-Stock

1+ parts

$26.281

100+ parts

-

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$26.876

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2,175

$26.281

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$26.876

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DigiPath Technology Company

USA . 2,207 parts In-Stock

1+ parts

$28.938

100+ parts

$26.623

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2,207

$28.938

$26.623

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ChromeModa Solutions

Germany . 1,872 parts In-Stock

1+ parts

$29.529

100+ parts

$24.214

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1,872

$29.529

$24.214

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IDEA Electronic Components Group

UK . 219 parts In-Stock

1+ parts

$29.529

100+ parts

$28.053

1k+ parts

$26.576

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219

$29.529

$28.053

$26.576

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Perfect Parts

USA . 5,625 parts In-Stock

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5,625

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iodParts Technologies Inc.

India . 1,120 parts In-Stock

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1,120

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Northwest PG Solutions

USA . 793 parts In-Stock

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Native Components

USA . 319 parts In-Stock

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319

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Overview

Unleash the power of the CD4070BEE4 logic gates by Texas Instruments, a true testament to quality and reliability in electronics. Perfect for a wide range of applications, these logic gates offer unmatched performance and precision. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this product will exceed your expectations. Experience the value and benefits that this product brings to your projects, providing you with a competitive edge in the ever-evolving world of technology. Choose the CD4070BEE4 for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and reliability for the product, making it suitable for various environments.

Propagation Delay At Nominal Supply: 280 ns

The low propagation delay ensures fast processing speed, making it ideal for applications requiring quick response times.

No. of Functions: 4

Having multiple functions in one device increases efficiency and reduces the need for additional components.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand heat-intensive applications without compromising performance.

Technical Specifications

Logic Gates CD4070BEE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e4

Length:

19.305 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

280 ns

Propagation Delay (tpd):

280 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CD4070BEE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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