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CD4066BPWG4

Texas Instruments

CD4066BPWG4 by Texas Instruments

CD4066BPWG4 by Texas Instruments is a CMOS SPST switch with 4 channels, on-state resistance of 1300 ohm, and bandwidth of 40 kHz. It operates at temperatures from -55 to 125 °C and is ideal for military-grade applications requiring low power consumption and fast switching times.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,828 parts In-Stock

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Vyrian

USA . 2,992 parts In-Stock

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2,992

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One Stop Electronics

USA . 1,111 parts In-Stock

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$1.500

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$1.500

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Semicontronic

India . 1,511 parts In-Stock

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$2.500

100+ parts

$2.438

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$2.425

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1,511

$2.500

$2.438

$2.425

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Ampacity Inc.

Singapore . 372 parts In-Stock

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$2.500

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372

$2.500

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AZTECH Wire

Italy . 727 parts In-Stock

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$6.812

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727

$6.812

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Parana Technologies

USA . 1,179 parts In-Stock

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$9.796

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$10.367

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$9.796

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$10.367

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DigiPath Technology Company

USA . 788 parts In-Stock

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$10.787

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$9.924

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788

$10.787

$9.924

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ChromeModa Solutions

Germany . 5,574 parts In-Stock

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$11.007

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$9.026

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$11.007

$9.026

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IDEA Electronic Components Group

UK . 1,200 parts In-Stock

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$11.007

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$10.457

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$9.906

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$11.007

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$9.906

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Corphita

USA . 3,682 parts In-Stock

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Northwest PG Solutions

USA . 1,990 parts In-Stock

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Microchip USA

USA . 1,353 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Native Components

USA . 164 parts In-Stock

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Overview

Enhance your electronic designs with the CD4066BPWG4 by Texas Instruments, a top-tier manufacturer known for delivering high-quality components. This multiplexer and switch offers unparalleled reliability and performance, making it ideal for various applications. With its compact size and advanced technology, this product provides exceptional value to customers seeking dependable solutions for their projects. Upgrade your circuits with the CD4066BPWG4 and experience the benefits of superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for internal components, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy and reliable installation on circuit boards, saving time and effort during assembly.

No. of Functions: 4

Offers versatility and flexibility in signal routing and switching options.

Nominal Supply Voltage (Vsup): 5 V

Compatible with common power supply standards, making integration into existing systems seamless.

Temperature Grade: MILITARY

Meets rigorous military-grade standards for performance and reliability, ensuring operation in harsh environments.

Technical Specifications

Multiplexers & Switches CD4066BPWG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Nominal Bandwidth:

40 kHz

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

Nominal Negative Supply Voltage (Vsup):

-5 V

Normal Position (V):

NO

No. of Channels:

4

No. of Functions:

4

No. of Terminals:

14

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

1300 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.03 mA

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

70 ns

Maximum Switch-on Time:

70 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

CD4066BPWG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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