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CD4050BDE4

Texas Instruments

CD4050BDE4 by Texas Instruments

CD4050BDE4 by Texas Instruments is a CMOS logic gate with 6 functions, 140 ns propagation delay at 10V. It operates b/w -55 to 125 °C and has a max power supply current of 0.12 mA. Ideal for military-grade applications requiring fast signal processing in compact spaces.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 690 parts In-Stock

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One Stop Electronics

USA . 138 parts In-Stock

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Parana Technologies

USA . 1,586 parts In-Stock

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Corohmni

South Africa . 654 parts In-Stock

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DigiPath Technology Company

USA . 1,849 parts In-Stock

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ChromeModa Solutions

Germany . 4,676 parts In-Stock

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IDEA Electronic Components Group

UK . 319 parts In-Stock

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Ampacity Inc.

Singapore . 1,380 parts In-Stock

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Component Stockers USA

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Corphita

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Microchip USA

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Continental Prestige Electronics

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Aranea Global

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Argo Parts USA

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Overview

Elevate your electronic projects with the CD4050BDE4 by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers another exceptional product in the category of logic gates. This versatile device offers a range of applications, making it a valuable addition to any project. With fast propagation delay and low power consumption, the CD4050BDE4 provides efficiency without sacrificing performance. Trust Texas Instruments to provide innovative solutions for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making the product a good choice for long-term use.

Propagation Delay At Nominal Supply: 140 ns

The low propagation delay ensures fast and efficient operation, making this product ideal for time-sensitive applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation, making this product a suitable choice for compact electronic designs.

No. of Functions: 6

With multiple functions in one package, this product offers versatility and functionality, making it a cost-effective choice for various applications.

Nominal Supply Voltage / Vsup (V): 10

The nominal supply voltage of 10V ensures stable and consistent performance, making this product a reliable choice for continuous use.

Load Capacitance (CL): 50 pF

The low load capacitance minimizes signal distortion, making this product a dependable choice for precise signal processing.

Power Supplies (V): 5/15

With dual power supply options, this product offers flexibility and compatibility with different voltage requirements, making it a versatile choice for various systems.

No. of Terminals: 16

The ample number of terminals allow for easy connections and integration, making this product a user-friendly choice for installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enhances portability, making this product a practical choice for compact electronic devices.

Technical Specifications

Logic Gates CD4050BDE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

18 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.12 mA

Propagation Delay At Nominal Supply:

140 ns

Propagation Delay (tpd):

140 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

5 V

Nominal Supply Voltage / Vsup (V):

10

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4050BDE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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