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CD4007UBNSRG4

Texas Instruments

CD4007UBNSRG4 by Texas Instruments

CD4007UBNSRG4 by Texas Instruments is a CMOS logic gate with 3 functions, 110 ns propagation delay at 5V, and 50 pF load capacitance. It is used in military-grade applications due to its small outline package style and dual terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,673 parts In-Stock

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Digiode

USA . 3,278 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 806 parts In-Stock

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$7.459

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806

$7.459

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Parana Technologies

USA . 1,530 parts In-Stock

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$11.485

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$11.898

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DigiPath Technology Company

USA . 992 parts In-Stock

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$12.646

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$11.634

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992

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ChromeModa Solutions

Germany . 2,885 parts In-Stock

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$12.904

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$10.581

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IDEA Electronic Components Group

UK . 1,567 parts In-Stock

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$12.904

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$12.259

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$11.614

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One Stop Electronics

USA . 1,414 parts In-Stock

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$54.000

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Component Stockers USA

USA . 556 parts In-Stock

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$99.990

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Corphita

USA . 3,579 parts In-Stock

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Microchip USA

USA . 2,938 parts In-Stock

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Native Components

USA . 840 parts In-Stock

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Northwest PG Solutions

USA . 837 parts In-Stock

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Overview

Elevate your electronic projects to the next level with the CD4007UBNSRG4 by Texas Instruments, a leading manufacturer known for delivering top-notch quality and reliability. As part of the Logic Gates category, this versatile component offers endless possibilities for circuit design and operation. With a nominal supply voltage of 5V and a maximum operating temperature of 125°C, this product is designed to excel in various applications. Experience the value and benefits that this small outline package brings, from its low power consumption to its high-speed performance. Upgrade your projects with the CD4007UBNSRG4 and unlock a world of potential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 110 ns

This low propagation delay ensures fast response times, making this product suitable for time-sensitive applications.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes this product compatible with a wide range of systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand extreme environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the product can function reliably in cold environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable.

Technical Specifications

Logic Gates CD4007UBNSRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

DUAL COMPLEMENTARY PAIR PLUS INVERTER

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

10.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

110 ns

Propagation Delay (tpd):

110 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

CD4007UBNSRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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