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BUX83

Texas Instruments

BUX83 by Texas Instruments

BUX83 by Texas Instruments is an NPN transistor with a max power dissipation of 60W and a max collector current of 6A. With a nominal transition frequency of 6MHz, it is suitable for high-power applications in electronic circuits requiring efficient switching capabilities.

Median Price

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Lifecycle Status

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9

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1k+

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Vyrian

USA . 8,090 parts In-Stock

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Digiode

USA . 1,211 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 21 parts In-Stock

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Holdelec - ElecDif-Pro

France . 21 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 18 parts In-Stock

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ECAB

Sweden . 12 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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LittleDiode

UK . 6 parts In-Stock

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Huijzer Components

Netherlands . 2 parts In-Stock

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Parana Technologies

USA . 1,999 parts In-Stock

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$0.603

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$1.681

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DigiPath Technology Company

USA . 49 parts In-Stock

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$0.663

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$0.610

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IDEA Electronic Components Group

UK . 983 parts In-Stock

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$0.677

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$0.609

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ChromeModa Solutions

Germany . 682 parts In-Stock

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Modulus Dynamics

Lithuania . 19,640 parts In-Stock

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$0.919

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AZTECH Wire

Italy . 212 parts In-Stock

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One Stop Electronics

USA . 436 parts In-Stock

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Corphita

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Northwest PG Solutions

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Native Components

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Assy Fe

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Overview

Unleash the power of innovation with the BUX83 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality transistors that are reliable and efficient. The BUX83 is perfect for a variety of applications, providing customers with a versatile solution for their electronic needs. Experience the value and benefits of this NPN transistor, offering a maximum power dissipation of 60W and a maximum collector current of 6A. Trust Texas Instruments to deliver high-performance products that push the boundaries of technology.

Feature Benefit Bullets

Polarity or Channel Type NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely compatible.

Configuration SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic projects.

Maximum Power Dissipation (Abs) 60 W

High maximum power dissipation allows the transistor to handle a significant amount of power, making it suitable for applications that require high power handling capabilities.

Maximum Operating Temperature 140 °C

With a high maximum operating temperature, this transistor can withstand a wide range of temperature conditions, increasing its reliability and versatility.

Maximum Collector Current (IC) 6 A

The high maximum collector current allows for the handling of higher current loads, making this transistor suitable for applications that require high current capabilities.

Nominal Transition Frequency (fT) 6 MHz

The high nominal transition frequency indicates that this transistor can operate at high speeds, making it suitable for applications that require fast switching and amplification.

Technical Specifications

Other Function Transistors BUX83 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

6 A

Configuration:

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BUX83 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-227-1944, 5961012271944

NIIN

012271944

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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