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BUX82

Texas Instruments

BUX82 by Texas Instruments

BUX82 by Texas Instruments is an NPN transistor with a max power dissipation of 60W and max collector current of 6A. With a min DC current gain of 40, it operates up to 140°C making it suitable for high-power applications like amplifiers and power supplies.

Median Price

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Lifecycle Status

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16

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1k+

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Vyrian

USA . 8,969 parts In-Stock

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Digiode

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Huijzer Components

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ACDS - Activité Composants Distribution Service

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ECAB

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Sinequanon

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Holdelec - ElecDif-Pro

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LittleDiode

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Euro-Tech

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PUI

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Pegasus Components GmbH

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GES GmbH

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Fibra_Brandt Electronic GMBH

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Bristol Electronics

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Rotakorn

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Modulus Dynamics

Lithuania . 2,501 parts In-Stock

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$0.809

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$0.777

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$0.744

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Parana Technologies

USA . 1,794 parts In-Stock

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$1.743

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$2.320

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DigiPath Technology Company

USA . 532 parts In-Stock

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$1.919

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$1.765

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ChromeModa Solutions

Germany . 4,441 parts In-Stock

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IDEA Electronic Components Group

UK . 1,957 parts In-Stock

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AZTECH Wire

Italy . 472 parts In-Stock

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One Stop Electronics

USA . 651 parts In-Stock

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Corphita

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Native Components

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Northwest PG Solutions

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Authorized Procurement Solutions

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Assy Fe

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Discover the reliability and performance of the BUX82 by Texas Instruments, a top-quality NPN transistor that offers unmatched power dissipation and collector current capabilities. Ideal for a wide range of applications, this single-configured transistor boasts a minimum DC current gain of 40 and a maximum operating temperature of 140°C. Trust Texas Instruments to deliver superior products that meet your needs and exceed your expectations. Whether you're in need of high-power amplification or precise signal switching, the BUX82 provides the value, benefits, and advantages you've been looking for.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making them suitable for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuits, making them a good choice for basic electronics projects or designs.

Maximum Power Dissipation (Abs): 60 W

With a high maximum power dissipation, this transistor can handle larger amounts of power without overheating, making it reliable for high-power applications.

Minimum DC Current Gain (hFE): 40

A higher DC current gain means that the transistor can amplify signals effectively, providing consistent and reliable performance in various circuit designs.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature allows this transistor to operate in harsh environments or extended use without issues, enhancing its durability and versatility.

Maximum Collector Current (IC): 6 A

With a high maximum collector current, this transistor can handle large current loads, making it suitable for power applications that require high current capabilities.

Nominal Transition Frequency (fT): 12 MHz

The high nominal transition frequency indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications such as RF amplification or signal processing.

Technical Specifications

Other Function Transistors BUX82 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

6 A

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BUX82 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-170-8100, 5961121708100, 5961-99-656-4506, 5961996564506

NIIN

121708100, 996564506

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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