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BUF634AIDRBT

Texas Instruments

BUF634AIDRBT by Texas Instruments

BUF634AIDRBT by Texas Instruments is a buffer amplifier with 60000 uV max input offset voltage, 210 MHz nominal bandwidth, and 2 uA max average bias current. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Digiode

USA . 3,501 parts In-Stock

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VNN

France . 3,293 parts In-Stock

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Vyrian

USA . 2,092 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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Dan-Mar Components

USA . 1,000 parts In-Stock

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Nova Conductors

Japan . 20 parts In-Stock

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One Stop Electronics

USA . 413 parts In-Stock

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$0.410

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$0.410

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Parana Technologies

USA . 708 parts In-Stock

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$2.653

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$3.143

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708

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IDEA Electronic Components Group

UK . 2,264 parts In-Stock

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$2.981

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$2.683

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ChromeModa Solutions

Germany . 1,059 parts In-Stock

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$2.981

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$2.444

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Corohmni

South Africa . 148 parts In-Stock

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$3.042

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Ampacity Inc.

Singapore . 1,537 parts In-Stock

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$3.410

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Semicontronic

India . 805 parts In-Stock

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$5.410

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$5.275

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$5.248

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805

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AZTECH Wire

Italy . 664 parts In-Stock

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Corphita

USA . 3,370 parts In-Stock

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Continental Prestige Electronics

USA . 2,914 parts In-Stock

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Argo Parts USA

USA . 2,796 parts In-Stock

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DigiPath Technology Company

USA . 1,682 parts In-Stock

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Bastille Electronics

Australia . 98 parts In-Stock

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Overview

Enhance your audio projects with the high-quality BUF634AIDRBT Buffer Amplifier by Texas Instruments. Known for its reliability and performance, Texas Instruments delivers cutting-edge technology in a compact package. Perfect for automotive applications and more, this buffer amplifier offers a wide bandwidth of 210 MHz and low bias current for optimal signal integrity. Experience the value and benefits of Texas Instruments' expertise with the BUF634AIDRBT, providing customers with unmatched quality and precision in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and protection for internal components, ensuring reliable performance over time.

Maximum Input Offset Voltage: 60000 uV

Allows for precise and accurate signal processing with minimal error.

Maximum Average Bias Current (IIB): 2 uA

Low bias current ensures minimal power consumption and stable operation.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage for efficient operation and performance.

Nominal Bandwidth (3dB): 210 MHz

High bandwidth allows for fast signal processing and response times.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications, providing reliability in varying temperature conditions.

Amplifier Type: BUFFER

Designed specifically for buffering signals, ensuring signal integrity and consistency.

Technical Specifications

Buffer Amplifiers BUF634AIDRBT attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

210 MHz

Nominal Slew Rate:

3750 V/us

Input Offset Voltage Limit:

60 mV

Peak Bias Current:

2 uA

Maximum Bias Current (IIB) @25 °C:

2 uA

Operational Characteristics

Maximum Supply Current:

12 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

SOLCC8,.11,25

Trade Compliance

BUF634AIDRBT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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