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BUF634AIDDAT

Texas Instruments

BUF634AIDDAT by Texas Instruments

BUF634AIDDAT by Texas Instruments is a buffer amplifier with 65000uV max input offset voltage, 210MHz nominal bandwidth, and 3750V/us slow rate. Ideal for automotive applications due to its bipolar technology, -40 to 125 °C operating temperature range, and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,977 parts In-Stock

1+ parts

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6,977

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Digiode

USA . 3,706 parts In-Stock

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3,706

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 59 parts In-Stock

1+ parts

$4.414

100+ parts

-

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$4.835

10k+ parts

-

59

$4.414

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$4.835

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DigiPath Technology Company

USA . 716 parts In-Stock

1+ parts

$4.860

100+ parts

$4.471

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716

$4.860

$4.471

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ChromeModa Solutions

Germany . 5,771 parts In-Stock

1+ parts

$4.959

100+ parts

$4.066

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5,771

$4.959

$4.066

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IDEA Electronic Components Group

UK . 1,626 parts In-Stock

1+ parts

$4.959

100+ parts

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$4.463

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1,626

$4.959

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$4.463

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Native Components

USA . 555 parts In-Stock

1+ parts

$6.852

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555

$6.852

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One Stop Electronics

USA . 1,086 parts In-Stock

1+ parts

$7.410

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1,086

$7.410

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AZTECH Wire

Italy . 285 parts In-Stock

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$8.420

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285

$8.420

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Corphita

USA . 1,795 parts In-Stock

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1,795

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Northwest PG Solutions

USA . 385 parts In-Stock

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$6.715

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385

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$6.715

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Overview

Unlock the power of high-quality audio with the BUF634AIDDAT by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers reliable and top-notch buffer amplifiers designed to enhance your sound system performance. Perfect for automotive applications, this small outline amplifier offers a nominal bandwidth of 210 MHz and a nominal supply voltage of 15V. With a temperature grade suitable for automotive use, the BUF634AIDDAT ensures optimal performance even in challenging environments. Upgrade your audio experience today with this versatile and efficient buffer amplifier from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and resistance to external factors, making the product suitable for various environments.

Maximum Input Offset Voltage: 65000 uV

High input offset voltage ensures accurate signal amplification and minimal distortions.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage ensures stable and efficient operation of the buffer amplifier.

Nominal Bandwidth (3dB): 210 MHz

High bandwidth indicates the amplifier's ability to amplify a wide range of frequencies accurately and without distortion.

Technology: BIPOLAR

Bipolar technology offers high gain, low noise, and fast response characteristics, making it suitable for various signal amplification applications.

Amplifier Type: BUFFER

Buffer amplifiers provide unity gain and high input impedance, making them ideal for isolating and buffering signals without affecting the original signal quality.

Technical Specifications

Buffer Amplifiers BUF634AIDDAT attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

210 MHz

Nominal Slew Rate:

3750 V/us

Input Offset Voltage Limit:

65 mV

Operational Characteristics

Maximum Supply Current:

2.3 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.067 in (1.7 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug

Package Equivalence Code:

SOP8,.25

Trade Compliance

BUF634AIDDAT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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