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BQ20Z60DBTR-R1

Texas Instruments

BQ20Z60DBTR-R1 by Texas Instruments

BQ20Z60DBTR-R1 by Texas Instruments is a Power Management IC with 30 terminals, operating b/w -40 to 85°C. It has a supply voltage range of 2.4V to 2.6V and features adjustable threshold with industrial temperature grade suitability. Ideal for power supply management circuits in various applications requiring small outline, thin profile packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,774 parts In-Stock

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Digiode

USA . 4,714 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,497 parts In-Stock

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$0.500

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1,497

$0.500

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One Stop Electronics

USA . 1,478 parts In-Stock

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$0.500

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1,478

$0.500

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Semicontronic

India . 609 parts In-Stock

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$5.500

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$5.362

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$5.335

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609

$5.500

$5.362

$5.335

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AZTECH Wire

Italy . 515 parts In-Stock

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$8.797

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515

$8.797

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Parana Technologies

USA . 2,018 parts In-Stock

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$10.150

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$10.689

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2,018

$10.150

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$10.689

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DigiPath Technology Company

USA . 90 parts In-Stock

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$11.177

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90

$11.177

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ChromeModa Solutions

Germany . 3,003 parts In-Stock

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$11.405

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$9.352

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3,003

$11.405

$9.352

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IDEA Electronic Components Group

UK . 2,096 parts In-Stock

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$11.405

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$10.835

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$10.264

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2,096

$11.405

$10.835

$10.264

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Corphita

USA . 4,334 parts In-Stock

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Native Components

USA . 884 parts In-Stock

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Northwest PG Solutions

USA . 588 parts In-Stock

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Microchip USA

USA . 353 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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Overview

Enhance the efficiency and reliability of your power management systems with the BQ20Z60DBTR-R1 by Texas Instruments. Known for their superior quality and cutting-edge technology, Texas Instruments delivers top-of-the-line Power Management ICs like this one. Ideal for a wide range of applications, this product offers customers unmatched value, benefits, and advantages. Upgrade your systems today with the BQ20Z60DBTR-R1 and experience the difference that Texas Instruments can make in your operations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the Power Management IC, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 2.5 V

Optimal supply voltage for efficient power management and performance of the IC.

No. of Terminals: 30

Sufficient number of terminals for various connections and functionalities, enhancing versatility.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments with demanding conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for reliable operation of the IC.

Width (mm): 4.4 mm

Compact width allows for space-saving design and integration into tight spaces.

Minimum Supply Voltage (Vsup): 2.4 V

Ensures that the IC can operate effectively even at lower voltage levels, increasing its efficiency.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands high reflow temperatures for soldering process without compromising its functionality.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, meeting the requirements for reliability and durability in harsh environments.

Adjustable Threshold: YES

Allows for customization of voltage thresholds, enabling flexibility in power management settings.

Technical Specifications

Power Management ICs BQ20Z60DBTR-R1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G30

JESD-609 Code:

e4

Length:

7.8 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

30

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

BQ20Z60DBTR-R1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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