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BQ20Z45DBTR-R1

Texas Instruments

BQ20Z45DBTR-R1 by Texas Instruments

BQ20Z45DBTR-R1 by Texas Instruments is a Power Management IC with 38 terminals, operating b/w -40 to 85°C. It supports supply voltages from 4.5V to 25V and has a compact rectangular package ideal for industrial applications requiring power supply support circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 6,719 parts In-Stock

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Digiode

USA . 4,915 parts In-Stock

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Vyrian

USA . 4,613 parts In-Stock

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VNN

France . 3,492 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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One Stop Electronics

USA . 1,386 parts In-Stock

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$3.500

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$3.500

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Ampacity Inc.

Singapore . 980 parts In-Stock

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$3.500

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980

$3.500

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Parana Technologies

USA . 1,472 parts In-Stock

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$4.140

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$4.589

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1,472

$4.140

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$4.589

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ChromeModa Solutions

Germany . 5,711 parts In-Stock

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$4.652

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$3.815

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IDEA Electronic Components Group

UK . 62 parts In-Stock

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$4.652

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$4.187

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62

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Corohmni

South Africa . 195 parts In-Stock

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$10.147

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AZTECH Wire

Italy . 612 parts In-Stock

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$16.066

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$25.967

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$23.630

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Lixinc

USA . 17,747 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,186 parts In-Stock

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Continental Prestige Electronics

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Alle Elektronik GmbH

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Argo Parts USA

USA . 3,107 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Perfect Parts

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Corphita

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Authorized Procurement Solutions

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Microchip USA

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DigiPath Technology Company

USA . 480 parts In-Stock

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$4.194

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Bastille Electronics

Australia . 82 parts In-Stock

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Overview

Experience the power of reliable and efficient power management with the BQ20Z45DBTR-R1 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality products that are designed to meet the highest standards. The BQ20Z45DBTR-R1 is a versatile Power Management IC that offers a wide range of applications, making it perfect for various projects. With its superior performance and innovative design, this product provides unparalleled value and benefits to customers. Trust Texas Instruments and elevate your projects with the BQ20Z45DBTR-R1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective.

Surface Mount: YES

Allows for easy and convenient installation onto PCBs without the need for additional hardware.

Nominal Supply Voltage (Vsup): 14 V

Ideal for applications requiring a stable supply voltage of 14 V.

No. of Terminals: 38

Provides ample connectivity options for various input and output functions.

Maximum Operating Temperature: 85 °C

Can operate effectively in high-temperature environments, ensuring reliability.

Width (mm): 4.4 mm

Compact width allows for space-saving integration in tight layouts or designs.

Terminal Form: GULL WING

Gull wing terminals offer enhanced thermal and mechanical performance during soldering and operation.

Moisture Sensitivity Level (MSL): 2

Indicates that the product is moderately sensitive to moisture, suitable for standard handling and storage practices.

Temperature Grade: INDUSTRIAL

Designed to meet the rigorous temperature requirements of industrial applications.

Maximum Supply Voltage (Vsup): 25 V

Capable of handling higher supply voltages, providing flexibility in power input options.

Technical Specifications

Power Management ICs BQ20Z45DBTR-R1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G38

JESD-609 Code:

e4

Length:

9.7 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

38

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP38,.25,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/25

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

25 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

14 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

BQ20Z45DBTR-R1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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