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BQ2003S-NTRG4

Texas Instruments

BQ2003S-NTRG4 by Texas Instruments

BQ2003S-NTRG4 by Texas Instruments is a Power Management IC with 16 terminals, operating at -40 to 85°C. It supports a nominal input voltage of 5V and features Pulse Width Modulation control technique with a max switching frequency of 300 kHz. Ideal for industrial applications requiring efficient power supply support circuits in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,956 parts In-Stock

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Digiode

USA . 3,078 parts In-Stock

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VNN

France . 58 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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One Stop Electronics

USA . 1,626 parts In-Stock

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$1.500

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$1.500

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Ampacity Inc.

Singapore . 648 parts In-Stock

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$5.500

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AZTECH Wire

Italy . 557 parts In-Stock

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$7.321

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Corohmni

South Africa . 935 parts In-Stock

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$14.729

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Parana Technologies

USA . 1,108 parts In-Stock

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$15.676

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$16.046

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DigiPath Technology Company

USA . 1,112 parts In-Stock

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$17.262

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$15.881

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IDEA Electronic Components Group

UK . 1,736 parts In-Stock

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$17.614

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$16.733

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$15.853

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ChromeModa Solutions

Germany . 1,605 parts In-Stock

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$14.443

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QUARKTWIN TECHNOLOGY LTD

USA . 4,598 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Microchip USA

USA . 3,653 parts In-Stock

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Argo Parts USA

USA . 3,496 parts In-Stock

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Corphita

USA . 936 parts In-Stock

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Bastille Electronics

Australia . 600 parts In-Stock

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Continental Prestige Electronics

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Overview

Experience the next level of power management with the BQ2003S-NTRG4 by renowned manufacturer Texas Instruments. This high-quality Power Management IC offers unparalleled efficiency and reliability for a wide range of applications. Providing customers with exceptional value, benefits, and advantages, this product is designed to enhance performance and optimize power consumption. Trust in Texas Instruments to deliver cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic body material ensures durability and can withstand various environmental conditions, making it a reliable choice.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Supply Voltage (Vsup): 5 V

Operates at a standard 5V supply voltage, making it compatible with a wide range of applications and power sources.

Maximum Operating Temperature: 85 °C

Can handle high operating temperatures of up to 85°C, ensuring stable performance even in demanding conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the power management IC.

Technical Specifications

Power Management ICs BQ2003S-NTRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

4.5 V

Nominal Input Voltage:

5 V

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Current (Isup):

2.2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Switcher Config:

BUCK

Maximum Switching Frequency:

300 kHz

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

7.5 mm

Trade Compliance

BQ2003S-NTRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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