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BFP12

Texas Instruments

BFP12 by Texas Instruments

BFP12 by Texas Instruments is an NPN transistor with a max power dissipation of 1.2W and a min DC current gain of 25. It operates at temperatures up to 140°C, with a max collector current of 0.5A and a transition frequency of 60MHz. Ideal for applications requiring high power dissipation and temperature resistance in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,911 parts In-Stock

1+ parts

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5,911

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Digiode

USA . 4,090 parts In-Stock

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4,090

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ComSIT Distribution GmbH

Germany . 2,534 parts In-Stock

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2,534

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 934 parts In-Stock

1+ parts

$0.035

100+ parts

-

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$0.034

934

$0.035

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-

$0.034

Parana Technologies

USA . 1,658 parts In-Stock

1+ parts

$0.756

100+ parts

-

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$1.758

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1,658

$0.756

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$1.758

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DigiPath Technology Company

USA . 1,651 parts In-Stock

1+ parts

$0.832

100+ parts

$0.765

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-

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1,651

$0.832

$0.765

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IDEA Electronic Components Group

UK . 2,194 parts In-Stock

1+ parts

$0.849

100+ parts

-

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$0.764

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2,194

$0.849

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$0.764

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ChromeModa Solutions

Germany . 759 parts In-Stock

1+ parts

$0.849

100+ parts

$0.696

1k+ parts

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759

$0.849

$0.696

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AZTECH Wire

Italy . 533 parts In-Stock

1+ parts

$9.931

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533

$9.931

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Ampacity Inc.

Singapore . 270 parts In-Stock

1+ parts

$29.050

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270

$29.050

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One Stop Electronics

USA . 1,436 parts In-Stock

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$37.050

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1,436

$37.050

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Semicontronic

India . 1,343 parts In-Stock

1+ parts

$59.050

100+ parts

$57.574

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$57.278

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1,343

$59.050

$57.574

$57.278

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Corphita

USA . 4,185 parts In-Stock

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4,185

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Northwest PG Solutions

USA . 1,702 parts In-Stock

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1,702

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Corohmni

South Africa . 109 parts In-Stock

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109

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Overview

Experience superior performance and reliability with the BFP12 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products that are trusted by professionals worldwide. The BFP12 is a versatile NPN transistor that offers powerful functionality for a wide range of applications. From amplifiers to oscillators, this transistor is designed to provide maximum power dissipation and minimum DC current gain, ensuring optimal performance in any project. Trust Texas Instruments to bring you the best in semiconductor technology with the BFP12.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifier circuits due to their high input impedance and fast switching speed.

Configuration: SINGLE

Single configuration transistors are easier to design with and implement in circuits compared to multiple configuration transistors.

Maximum Power Dissipation (Abs): 1.2 W

With a maximum power dissipation of 1.2W, this transistor can handle moderate power applications reliably.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures that the transistor provides sufficient amplification in various circuit configurations.

Maximum Operating Temperature: 140 °C

With a high maximum operating temperature of 140°C, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5A allows this transistor to handle moderate current loads, suitable for a wide range of applications.

Nominal Transition Frequency (fT): 60 MHz

A nominal transition frequency of 60MHz indicates that this transistor is capable of high-frequency operation, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Other Function Transistors BFP12 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFP12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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