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BFP11

Texas Instruments

BFP11 by Texas Instruments

BFP11 by Texas Instruments is an NPN transistor with a max power dissipation of 1.2W and fT of 60MHz. With IC of 0.5A, it's ideal for applications requiring high frequency amplification in a single configuration at temperatures up to 140°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,171 parts In-Stock

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5,171

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Digiode

USA . 1,124 parts In-Stock

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1,124

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 258 parts In-Stock

1+ parts

$1.375

100+ parts

-

1k+ parts

$2.094

10k+ parts

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258

$1.375

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$2.094

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DigiPath Technology Company

USA . 106 parts In-Stock

1+ parts

$1.514

100+ parts

$1.393

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106

$1.514

$1.393

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IDEA Electronic Components Group

UK . 1,498 parts In-Stock

1+ parts

$1.545

100+ parts

-

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$1.390

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1,498

$1.545

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$1.390

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ChromeModa Solutions

Germany . 444 parts In-Stock

1+ parts

$1.545

100+ parts

$1.267

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-

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444

$1.545

$1.267

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AZTECH Wire

Italy . 721 parts In-Stock

1+ parts

$19.010

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721

$19.010

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One Stop Electronics

USA . 492 parts In-Stock

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$22.050

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492

$22.050

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Semicontronic

India . 1,066 parts In-Stock

1+ parts

$37.050

100+ parts

$36.124

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$35.938

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1,066

$37.050

$36.124

$35.938

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Ampacity Inc.

Singapore . 1,023 parts In-Stock

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$45.050

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1,023

$45.050

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Corphita

USA . 2,249 parts In-Stock

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2,249

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Northwest PG Solutions

USA . 1,850 parts In-Stock

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1,850

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Native Components

USA . 814 parts In-Stock

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814

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Experience superior performance and reliability with the BFP11 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and innovation in every product. The BFP11, falling under the category of Other Function Transistors, offers unmatched value and benefits to customers. With its NPN polarity, single configuration, and impressive specifications, this transistor is ideal for a wide range of applications. Trust Texas Instruments for exceptional products that exceed expectations.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their ability to amplify signals effectively.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easier integration into various electronic systems.

Maximum Power Dissipation (Abs): 1.2 W

The high power dissipation capability ensures that the transistor can handle high power loads without overheating.

Minimum DC Current Gain (hFE): 25

A high DC current gain allows for efficient signal amplification, making this transistor suitable for applications requiring signal amplification.

Maximum Operating Temperature: 140 °C

With a maximum operating temperature of 140°C, this transistor can withstand higher temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current rating of 0.5 A allows this transistor to handle higher current levels, making it suitable for applications with higher power requirements.

Nominal Transition Frequency (fT): 60 MHz

The high nominal transition frequency of 60 MHz allows this transistor to operate at higher frequencies, making it suitable for applications requiring faster signal processing.

Technical Specifications

Other Function Transistors BFP11 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFP11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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