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BDW93A

Texas Instruments

BDW93A by Texas Instruments

Texas Instruments' BDW93A is an NPN Darlington transistor with 80W power dissipation, 750 min hFE, and 12A collector current. Ideal for high-power applications requiring efficient amplification in a wide temperature range up to 150°C.

Median Price

$1.035

Lifecycle Status

Suppliers In-Stock

9

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1k+

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Digiode

USA . 8,598 parts In-Stock

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Vyrian

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Anansix

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Fibra_Brandt Electronic GMBH

Germany . 538 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$0.966

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ABC Electronics Ltd.

UK . 109 parts In-Stock

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ComSIT Distribution GmbH

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LittleDiode

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GES GmbH

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Northwest PG Solutions

USA . 2,955 parts In-Stock

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$0.790

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$0.790

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Native Components

USA . 2,504 parts In-Stock

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$1.163

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Advanced Electronics

New Zealand . 18 parts In-Stock

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$1.433

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$1.304

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$1.175

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ChromeModa Solutions

Germany . 2,454 parts In-Stock

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$1.450

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$1.189

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IDEA Electronic Components Group

UK . 3,676 parts In-Stock

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$1.769

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$1.592

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Corohmni

South Africa . 422 parts In-Stock

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$1.960

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DigiPath Technology Company

USA . 3,821 parts In-Stock

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$3.327

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MKK Technologies

India . 1,710 parts In-Stock

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AZTECH Wire

Italy . 191 parts In-Stock

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$7.051

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One Stop Electronics

USA . 1,098 parts In-Stock

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$33.050

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Component Stockers USA

USA . 584 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 13,277 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 3,919 parts In-Stock

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Parana Technologies

USA . 3,890 parts In-Stock

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SupplyDigital Components

Austria . 2,541 parts In-Stock

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TANS Electronics

Latvia . 2,278 parts In-Stock

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Supply Digital

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Problanco Electronics

Mexico . 1,538 parts In-Stock

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UHIMA Technologies

Türkiye . 453 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality BDW93A transistor from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures reliability and performance in every product they create. The BDW93A is a versatile NPN Darlington transistor with a maximum power dissipation of 80 W, making it ideal for various applications. From amplifiers to power regulators, this transistor offers exceptional value, benefits, and advantages to customers looking for a reliable and efficient solution for their projects. Trust Texas Instruments for quality components that elevate your designs to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications due to their high input impedance and fast switching speeds.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for greater amplification of weak signals, making it suitable for applications requiring high power output.

Maximum Power Dissipation (Abs): 80 W

The high power dissipation capability of 80W ensures that this transistor can handle high power levels without getting damaged, making it suitable for applications with high power requirements.

Minimum DC Current Gain (hFE): 750

A high DC current gain of 750 indicates that small changes in base current result in large changes in collector current, making it efficient for amplification purposes.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for applications where elevated temperatures may be encountered.

Maximum Collector Current (IC): 12 A

The high collector current rating of 12A allows for the handling of large current flows, making it suitable for high-power applications such as motor control or power amplification.

Technical Specifications

Other Function Transistors BDW93A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

750

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BDW93A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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