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BDW93B

Texas Instruments

BDW93B by Texas Instruments

The Texas Instruments BDW93B is an NPN Darlington transistor with 80W power dissipation, 750 min hFE, and 12A collector current. Ideal for high-power applications in industries like automotive, telecommunications, and power management due to its high performance and reliability.

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Vyrian

USA . 5,642 parts In-Stock

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Digiode

USA . 4,233 parts In-Stock

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Halfin

Belgium . 800 parts In-Stock

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800

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ComSIT Distribution GmbH

Germany . 480 parts In-Stock

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480

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Anansix

USA . 323 parts In-Stock

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Bristol Electronics

USA . 275 parts In-Stock

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275

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Fibra_Brandt Electronic GMBH

Germany . 116 parts In-Stock

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ABC Electronics Ltd.

UK . 100 parts In-Stock

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100

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Tech-Mark Corp

USA . 58 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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LittleDiode

UK . 36 parts In-Stock

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Corel Iberica Componentes, S.L.

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Sinequanon

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Huijzer Components

Netherlands . 2 parts In-Stock

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Component Stockers USA

USA . 7,588 parts In-Stock

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$0.960

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$0.910

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$0.880

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IDEA Electronic Components Group

UK . 4,461 parts In-Stock

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$1.672

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$1.504

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ChromeModa Solutions

Germany . 6,881 parts In-Stock

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$1.969

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$1.615

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DigiPath Technology Company

USA . 1,197 parts In-Stock

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$3.143

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MKK Technologies

India . 278 parts In-Stock

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$3.143

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AZTECH Wire

Italy . 655 parts In-Stock

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$15.959

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One Stop Electronics

USA . 669 parts In-Stock

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$51.050

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Native Components

USA . 2,710 parts In-Stock

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$939.820

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$921.024

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$911.625

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$902.227

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Kepictronics

USA . 12,000 parts In-Stock

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Kulean Microsystems

USA . 6,833 parts In-Stock

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Northwest PG Solutions

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TANS Electronics

Latvia . 5,857 parts In-Stock

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Problanco Electronics

Mexico . 4,750 parts In-Stock

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Parana Technologies

USA . 4,485 parts In-Stock

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Supply Digital

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Corphita

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SupplyDigital Components

Austria . 1,099 parts In-Stock

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UHIMA Technologies

Türkiye . 867 parts In-Stock

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South Africa . 489 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the Texas Instruments BDW93B. Manufactured by a trusted industry leader, this NPN Darlington transistor offers exceptional quality and reliability. Ideal for a variety of applications, this transistor provides a maximum power dissipation of 80W and a minimum DC current gain of 750. With a maximum collector current of 12A and a maximum operating temperature of 150°C, the BDW93B delivers excellent performance and efficiency. Elevate your designs with the unmatched value and benefits that this transistor brings to the table.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in low-power amplification and switching circuits, making this product versatile for various applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain, making the transistor suitable for applications requiring high power amplification.

Maximum Power Dissipation (Abs): 80 W

With a high power dissipation capability, this transistor can handle high power loads without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 750

A high DC current gain ensures that the transistor can accurately amplify weak signals, making it suitable for precise amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate efficiently in a wide range of environments, increasing its reliability.

Maximum Collector Current (IC): 12 A

The high collector current rating enables the transistor to handle high current loads, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors BDW93B attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

750

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BDW93B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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