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BD243B

Texas Instruments

BD243B by Texas Instruments

BD243B by Texas Instruments is an NPN transistor with a max power dissipation of 65W and max collector current of 8A. With a min DC current gain of 30, it operates up to 150°C. Ideal for various applications requiring high-power amplification and switching capabilities.

Median Price

$0.254

Lifecycle Status

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Arrow

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Verical

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Rochester

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DigiKey

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Digiode

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Nova Conductors

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Anansix

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DigiKey Marketplace

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Pegasus Components GmbH

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LIBRA Elektronik GmbH

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ComSIT Distribution GmbH

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ECAB

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Fibra_Brandt Electronic GMBH

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Holdelec - ElecDif-Pro

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Semtec, LLC

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LittleDiode

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Manotoh

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Distributors (Availability)

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Ampacity Inc.

Singapore . 254 parts In-Stock

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Corphita

USA . 2,184 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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IDEA Electronic Components Group

UK . 2,933 parts In-Stock

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DigiPath Technology Company

USA . 2,602 parts In-Stock

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MKK Technologies

India . 728 parts In-Stock

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ChromeModa Solutions

Germany . 5,058 parts In-Stock

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Microchip USA

USA . 215 parts In-Stock

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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Parana Technologies

USA . 2,423 parts In-Stock

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Continental Prestige Electronics

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 520 parts In-Stock

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Schahn Electronic Components

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Overview

Enhance your electronic projects with the Texas Instruments BD243B transistor! Manufactured by a renowned leader in the industry, this NPN transistor offers reliability and high performance. With a maximum power dissipation of 65W and a maximum collector current of 8A, this transistor is ideal for a wide range of applications. Whether you're a hobbyist or a professional, the BD243B provides value, efficiency, and versatility in one compact component. Upgrade your designs today with the Texas Instruments BD243B transistor.

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration allows for high power dissipation and collector current, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it a user-friendly option for users.

Maximum Power Dissipation (Abs): 65 W

With a high power dissipation rating, this transistor can handle demanding applications without overheating.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain ensures consistent and reliable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, this transistor is ideal for applications requiring robust performance.

Maximum Collector Current (IC): 8 A

With a high collector current rating, this transistor can handle large current loads with ease.

Technical Specifications

Other Function Transistors BD243B attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

8 A

Configuration:

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BD243B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-33-126-6568, 5961331266568, 5961-99-736-1416, 5961997361416, 5961-12-312-0887, 5961123120887

NIIN

331266568, 997361416, 123120887

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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