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BD244B

Texas Instruments

BD244B by Texas Instruments

The Texas Instruments BD244B is a PNP transistor with a max power dissipation of 65W and max collector current of 8A. With a min DC current gain of 15, it operates up to 150°C. Ideal for applications requiring high power handling and amplification in electronic circuits.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

18

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1k+

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Rochester

USA . 271 parts In-Stock

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$0.238

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$0.197

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Digiode

USA . 8,568 parts In-Stock

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Nova Conductors

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Anansix

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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LIBRA Elektronik GmbH

Germany . 300 parts In-Stock

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Vyrian

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Pegasus Components GmbH

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ECAB

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Manotoh

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Sinequanon

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LittleDiode

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Corphita

USA . 6,658 parts In-Stock

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$0.176

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Component Stockers USA

USA . 339 parts In-Stock

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$0.200

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$0.190

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Argo Parts USA

USA . 4,110 parts In-Stock

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$0.345

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$0.335

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$0.345

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Continental Prestige Electronics

USA . 1,234 parts In-Stock

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$0.345

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$0.339

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Netroflash

USA . 100 parts In-Stock

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$0.345

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$0.328

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$0.321

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$0.345

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Aztec Data Supply Inc.

USA . 188 parts In-Stock

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$0.429

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$0.429

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ChromeModa Solutions

Germany . 4,994 parts In-Stock

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$0.507

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$0.416

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Corohmni

South Africa . 75 parts In-Stock

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IDEA Electronic Components Group

UK . 3,864 parts In-Stock

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$1.432

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DigiPath Technology Company

USA . 2,934 parts In-Stock

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$2.991

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MKK Technologies

India . 1,536 parts In-Stock

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AZTECH Wire

Italy . 281 parts In-Stock

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TANS Electronics

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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A-Z Elektronik GmbH

Germany . 5,663 parts In-Stock

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Kulean Microsystems

USA . 4,791 parts In-Stock

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Supply Digital

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Alle Elektronik GmbH

Germany . 3,775 parts In-Stock

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SupplyDigital Components

Austria . 3,718 parts In-Stock

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Parana Technologies

USA . 1,590 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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Assy Fe

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Infinite Electronics LLP (Excess)

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Glotronic Ltd.

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Overview

Unleash the power of innovation with the BD244B by Texas Instruments, a top-of-the-line PNP transistor designed for superior performance and reliability. With a maximum power dissipation of 65W and a minimum DC current gain of 15, this transistor is perfect for a wide range of applications. From amplifiers to power supplies, the BD244B offers unmatched value with its high collector current of 8A and nominal transition frequency of 3MHz. Trust in Texas Instruments' reputation for quality and excellence, and elevate your projects to new heights with the BD244B.

Feature Benefit Bullets

Polarity or Channel Type PNP :

The PNP configuration allows for easy integration into circuits requiring PNP transistors.

Configuration SINGLE :

The single configuration simplifies circuit design and layout.

Maximum Power Dissipation (Abs) 65 W :

With a high power dissipation rating, this transistor can handle heavy loads without overheating.

Minimum DC Current Gain (hFE) 15 :

The minimum DC current gain ensures reliable amplification of signals.

Maximum Operating Temperature 150 °C :

With a high maximum operating temperature, this transistor can withstand elevated temperatures without degrading performance.

Maximum Collector Current (IC) 8 A :

The high collector current rating allows for the handling of large currents in the circuit.

Nominal Transition Frequency (fT) 3 MHz :

The high transition frequency enables fast switching speeds in high-frequency applications.

Technical Specifications

Other Function Transistors BD244B attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

8 A

Configuration:

Minimum DC Current Gain (hFE):

15

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD244B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-312-0886, 5961123120886, 5961-33-126-6569, 5961331266569, 5961-01-333-6199, 5961013336199, 5961-99-736-1415, 5961997361415

NIIN

123120886, 331266569, 013336199, 997361415

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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