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BD241D

Texas Instruments

BD241D by Texas Instruments

The Texas Instruments BD241D is an NPN transistor with a max power dissipation of 2W and max collector current of 3A. With a min DC current gain of 10, it operates up to 140°C, making it suitable for various applications like amplification circuits and voltage regulators.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,185 parts In-Stock

1+ parts

-

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2,185

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Digiode

USA . 1,239 parts In-Stock

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1,239

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 186 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

-

10k+ parts

$0.183

186

$0.191

-

-

$0.183

Northwest PG Solutions

USA . 327 parts In-Stock

1+ parts

$0.210

100+ parts

-

1k+ parts

-

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$0.185

327

$0.210

-

-

$0.185

Parana Technologies

USA . 602 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

$1.765

10k+ parts

-

602

$0.770

-

$1.765

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DigiPath Technology Company

USA . 1,884 parts In-Stock

1+ parts

$0.848

100+ parts

$0.780

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-

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1,884

$0.848

$0.780

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ChromeModa Solutions

Germany . 5,961 parts In-Stock

1+ parts

$0.865

100+ parts

$0.709

1k+ parts

-

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5,961

$0.865

$0.709

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IDEA Electronic Components Group

UK . 1,665 parts In-Stock

1+ parts

$0.865

100+ parts

-

1k+ parts

$0.778

10k+ parts

-

1,665

$0.865

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$0.778

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Aztec Data Supply Inc.

USA . 15 parts In-Stock

1+ parts

$1.028

100+ parts

-

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15

$1.028

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Andel Nordic

Denmark . 3,924 parts In-Stock

1+ parts

$1.750

100+ parts

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1k+ parts

$1.225

10k+ parts

$1.225

3,924

$1.750

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$1.225

$1.225

AZTECH Wire

Italy . 712 parts In-Stock

1+ parts

$8.917

100+ parts

-

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712

$8.917

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Ampacity Inc.

Singapore . 1,230 parts In-Stock

1+ parts

$33.050

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1,230

$33.050

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Semicontronic

India . 378 parts In-Stock

1+ parts

$35.050

100+ parts

$34.174

1k+ parts

$33.998

10k+ parts

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378

$35.050

$34.174

$33.998

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One Stop Electronics

USA . 1,175 parts In-Stock

1+ parts

$62.050

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1,175

$62.050

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Corphita

USA . 4,947 parts In-Stock

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4,947

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Corohmni

South Africa . 137 parts In-Stock

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137

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Overview

Unleash the power of innovation with the Texas Instruments BD241D NPN transistor. Crafted with precision by a trusted manufacturer, this transistor offers unparalleled quality and reliability for all your electronic projects. From amplifiers to power supplies, this versatile component is designed to deliver maximum performance in a single configuration. With a high DC current gain and low power dissipation, the BD241D ensures efficiency and durability in every application. Elevate your designs with the Texas Instruments BD241D and experience breakthrough results like never before.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and widely compatible.

Configuration: SINGLE

Single configuration transistors are easy to handle and integrate into circuits, simplifying the design process.

Maximum Power Dissipation (Abs): 2 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 indicates good amplification capabilities, allowing for efficient signal processing.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature of 140°C makes this transistor suitable for use in a wide range of environments and applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle higher current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 3 MHz

A nominal transition frequency of 3 MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Other Function Transistors BD241D attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD241D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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