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BD241

Texas Instruments

BD241 by Texas Instruments

BD241 by Texas Instruments is an NPN transistor with a max power dissipation of 40W and max collector current of 5A. With a min DC current gain of 10, it operates up to 150°C and has a transition frequency of 3MHz. Ideal for various electronic applications requiring high power handling and switching capabilities.

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Lifecycle Status

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8

In-Stock Inventory

1k+

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Digiode

USA . 6,115 parts In-Stock

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ECAB

Sweden . 4,163 parts In-Stock

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Anansix

USA . 2,711 parts In-Stock

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Vyrian

USA . 2,487 parts In-Stock

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Halfin

Belgium . 858 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 56 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 45 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 169 parts In-Stock

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$1.499

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$1.349

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ChromeModa Solutions

Germany . 3,062 parts In-Stock

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$1.787

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$1.465

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DigiPath Technology Company

USA . 1,528 parts In-Stock

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$2.818

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MKK Technologies

India . 927 parts In-Stock

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AZTECH Wire

Italy . 506 parts In-Stock

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One Stop Electronics

USA . 1,324 parts In-Stock

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Corphita

USA . 9,661 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Glotronic Ltd.

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Authorized Procurement Solutions

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Supply Digital

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Parana Technologies

USA . 1,725 parts In-Stock

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Northwest PG Solutions

USA . 1,667 parts In-Stock

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Native Components

USA . 1,270 parts In-Stock

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Assy Fe

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Overview

Enhance your electronic projects with the BD241 NPN transistor from Texas Instruments. Known for their exceptional quality and reliability, Texas Instruments offers a wide range of transistors for various applications. The BD241 is perfect for amplification, switching, and voltage regulation tasks, offering a maximum power dissipation of 40W and a minimum DC current gain of 10. With a maximum collector current of 5A and a nominal transition frequency of 3 MHz, this transistor provides superior performance and efficiency. Upgrade your circuit designs today with the BD241 and experience effortless functionality and enhanced productivity.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance, making them suitable for audio signal amplification.

Configuration: SINGLE

Single configuration transistors are easy to integrate into circuit designs and provide simple control over the flow of current, making them versatile for various applications.

Maximum Power Dissipation (Abs): 40 W

The high power dissipation capability allows this transistor to handle high power levels without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 10

A high DC current gain ensures efficient amplification of signals with minimal input power, making this transistor suitable for low power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, increasing its reliability in harsh environments.

Maximum Collector Current (IC): 5 A

The high collector current rating allows this transistor to handle high current loads, making it suitable for power switching and amplification applications.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency indicates that this transistor can switch signals at high speeds, making it ideal for high frequency applications such as RF amplification.

Technical Specifications

Other Function Transistors BD241 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BD241 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-33-126-6417, 5961331266417

NIIN

331266417

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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