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BAW14TF24

Texas Instruments

BAW14TF24 by Texas Instruments

The Texas Instruments BAW14TF24 is a RECTIFIER DIODE with max VF of 1.2V and max output current of 0.2A, operating up to 150°C. With a max reverse voltage of 300V and non-repetitive forward current of 4A, it's ideal for power supply applications in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,493 parts In-Stock

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2,493

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Digiode

USA . 665 parts In-Stock

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665

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 729 parts In-Stock

1+ parts

$0.010

100+ parts

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729

$0.010

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Parana Technologies

USA . 1,495 parts In-Stock

1+ parts

$0.117

100+ parts

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1k+ parts

$1.467

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1,495

$0.117

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$1.467

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DigiPath Technology Company

USA . 87 parts In-Stock

1+ parts

$0.128

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$0.118

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87

$0.128

$0.118

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ChromeModa Solutions

Germany . 1,561 parts In-Stock

1+ parts

$0.131

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$0.107

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1,561

$0.131

$0.107

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IDEA Electronic Components Group

UK . 724 parts In-Stock

1+ parts

$0.131

100+ parts

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$0.118

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724

$0.131

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$0.118

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Semicontronic

India . 949 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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949

$1.010

$0.985

$0.980

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One Stop Electronics

USA . 587 parts In-Stock

1+ parts

$3.010

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587

$3.010

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AZTECH Wire

Italy . 245 parts In-Stock

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$5.974

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245

$5.974

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Corphita

USA . 1,354 parts In-Stock

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1,354

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Northwest PG Solutions

USA . 944 parts In-Stock

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944

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Native Components

USA . 481 parts In-Stock

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Experience superior performance and reliability with the Texas Instruments BAW14TF24 RECTIFIER DIODE. As a leading manufacturer in the industry, Texas Instruments delivers top-quality diodes and rectifiers for a wide range of applications. With a maximum operating temperature of 150°C and a maximum output current of 0.2 A, this product offers unmatched efficiency and durability. Ensure seamless operation and optimal performance in your electronic devices with the BAW14TF24 by Texas Instruments.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the product easy to install and use, without any complex wiring or connections.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the diode can withstand a wide range of environmental conditions without damage, making it reliable for various applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting alternating current (AC) to direct current (DC) efficiently, making this product ideal for rectification applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop indicates minimal power loss across the diode, resulting in higher efficiency and better performance of the overall circuit.

Maximum Output Current: 0.2 A

Capable of handling maximum output current of 0.2 A, making it suitable for low to moderate power applications where a steady current flow is required.

Maximum Repetitive Peak Reverse Voltage: 300 V

High reverse voltage rating allows the diode to withstand reverse voltage spikes, ensuring protection against voltage surges or transients in the circuit.

Maximum Non Repetitive Peak Forward Current: 4 A

Capable of handling short-term peak forward currents up to 4 A, providing surge protection and preventing damage to the diode under sudden high current conditions.

Technical Specifications

Diodes & Rectifiers BAW14TF24 attributes and parameters. Explore more Diodes & Rectifiers devices from Texas Instruments

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Maximum Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

BAW14TF24 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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