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BAW101S

NXP Semiconductors

BAW101S by NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Prism Electronics

USA . 9,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 9,000 parts In-Stock

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Vyrian

USA . 2,783 parts In-Stock

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Digiode

USA . 2,084 parts In-Stock

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Anansix

USA . 270 parts In-Stock

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270

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One Stop Electronics

USA . 515 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 8,756 parts In-Stock

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$5.580

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Kepictronics

USA . 26,000 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Perfect Parts

USA . 10,209 parts In-Stock

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Northwest PG Solutions

USA . 3,147 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Corphita

USA . 2,306 parts In-Stock

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Supply Digital

USA . 1,831 parts In-Stock

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UNI Independent Distributors

Spain . 1,722 parts In-Stock

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Native Components

USA . 1,596 parts In-Stock

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Technical Specifications

Diodes & Rectifiers BAW101S attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

250 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAW101S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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