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BAW156,215

NXP Semiconductors

BAW156,215 by NXP Semiconductors

NXP Semiconductors' BAW156,215 is a common anode diode with 2 elements, featuring a max reverse recovery time of 3 us. This small outline rectifier diode has a max forward voltage of 1.1V and output current of 0.16A, suitable for applications requiring high-speed switching in electronic circuits.

Median Price

$0.129

Lifecycle Status

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Rochester

USA . 30,000 parts In-Stock

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Adafruit Industries

USA . 200 parts In-Stock

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$0.228

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$0.207

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$0.228

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Verical

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EBV Elektronik

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Arrow

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Chip1Stop

Japan . 970 parts In-Stock

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Digiode

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TME

Poland . 14 parts In-Stock

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14

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NAC Semi

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Chip Stock

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IBS Electronics

USA . 36,000 parts In-Stock

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Vyrian

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Contempo Components LLC

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Connector Distribution Corp

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Right Parts Inc.

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Anansix

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Nova Conductors

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Semicontronic

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Ampacity Inc.

Singapore . 59,637 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 7,919 parts In-Stock

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Modulus Dynamics

Lithuania . 8,995 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Perfect Parts

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Overview

Enhance your electronic projects with the high-quality BAW156,215 diode by NXP Semiconductors. Designed for efficiency and reliability, this common anode diode boasts a fast reverse recovery time of 3 us and a maximum power dissipation of 0.25W. Ideal for a wide range of applications, this rectifier diode offers a maximum output current of 0.16A and a maximum forward voltage of 1.1V. Trust NXP Semiconductors to deliver superior performance and value in every component. Elevate your designs with the BAW156,215 diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON ANODE, 2 ELEMENTS

Allows for easy integration into common anode circuits, making it versatile for various applications.

Maximum Reverse Recovery Time: 3 us

Fast reverse recovery time ensures efficient operation and reduces power losses in the circuit.

Package Shape: RECTANGULAR

Compact rectangular shape saves space and facilitates efficient PCB layout designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in diverse operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for effective rectification of AC to DC, suitable for power supply applications.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop minimizes power losses and improves efficiency.

Maximum Output Current: 0.16 A

Suitable for low to moderate current applications, ensuring safe and reliable operation.

Maximum Repetitive Peak Reverse Voltage: 85 V

Handles high reverse voltage levels, providing protection against voltage spikes and surges.

Technical Specifications

Diodes & Rectifiers BAW156,215 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW LEAKAGE CURRENT

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Recovery Time:

3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAW156,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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