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ADS61B29IRGZR

Texas Instruments

ADS61B29IRGZR by Texas Instruments

The Texas Instruments ADS61B29IRGZR is a 12-bit ADC with 250 MHz sample rate, 0.061% linearity error, and CMOS technology. It operates in industrial temperatures (-40 to 85 °C) and has a max analog input voltage of ±2 V. Ideal for applications requiring high-speed data conversion like communication systems or test equipment.

Median Price

$90.636

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 6,995 parts In-Stock

1+ parts

$90.636

100+ parts

$87.910

1k+ parts

$68.147

10k+ parts

-

6,995

$90.636

$87.910

$68.147

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,813 parts In-Stock

1+ parts

$86.104

100+ parts

-

1k+ parts

-

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1,813

$86.104

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-

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Vyrian

USA . 3,455 parts In-Stock

1+ parts

-

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-

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-

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3,455

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Distributors (Availability)

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AZTECH Wire

Italy . 104 parts In-Stock

1+ parts

$9.190

100+ parts

-

1k+ parts

-

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104

$9.190

-

-

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Parana Technologies

USA . 1,033 parts In-Stock

1+ parts

$23.397

100+ parts

-

1k+ parts

$24.029

10k+ parts

-

1,033

$23.397

-

$24.029

-

DigiPath Technology Company

USA . 2,296 parts In-Stock

1+ parts

$25.763

100+ parts

$23.702

1k+ parts

-

10k+ parts

-

2,296

$25.763

$23.702

-

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ChromeModa Solutions

Germany . 2,152 parts In-Stock

1+ parts

$26.289

100+ parts

$21.557

1k+ parts

-

10k+ parts

-

2,152

$26.289

$21.557

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IDEA Electronic Components Group

UK . 753 parts In-Stock

1+ parts

$26.289

100+ parts

$24.975

1k+ parts

$23.660

10k+ parts

-

753

$26.289

$24.975

$23.660

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Native Components

USA . 356 parts In-Stock

1+ parts

$26.750

100+ parts

-

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-

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356

$26.750

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-

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Northwest PG Solutions

USA . 24 parts In-Stock

1+ parts

$29.425

100+ parts

$26.482

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-

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24

$29.425

$26.482

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Corphita

USA . 281 parts In-Stock

1+ parts

$81.572

100+ parts

-

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281

$81.572

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Microchip USA

USA . 1,417 parts In-Stock

1+ parts

$137.150

100+ parts

$134.760

1k+ parts

$133.570

10k+ parts

$132.380

1,417

$137.150

$134.760

$133.570

$132.380

A-Z Elektronik GmbH

Germany . 7,517 parts In-Stock

1+ parts

-

100+ parts

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7,517

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Lixinc

USA . 6,993 parts In-Stock

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6,993

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Alle Elektronik GmbH

Germany . 3,402 parts In-Stock

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3,402

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Kepictronics

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Overview

Experience unparalleled precision and performance with the ADS61B29IRGZR by Texas Instruments. As a leader in analog-to-digital converters, Texas Instruments delivers cutting-edge technology that exceeds industry standards. This versatile chip carrier offers a wide range of applications, from industrial automation to medical imaging. With a focus on quality and reliability, this ADC ensures accurate data conversion at high speeds. Trust Texas Instruments for superior products that provide unmatched value and efficiency. Elevate your projects with the ADS61B29IRGZR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and facilitating automated assembly processes.

No. of Bits: 12

Provides high resolution and accuracy in converting analog signals to digital.

Maximum Linearity Error (EL): 0.061%

Ensures precision and accuracy in signal conversion.

Power Supplies (V): 1.8,3.3

Compatible with a range of power supply voltages, offering versatility in application.

No. of Terminals: 48

Provides ample connections for interfacing with other components in a circuit.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The variety of package styles allows for flexible integration into different design configurations.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Operates reliably in low-temperature environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures good conductivity and corrosion resistance, promoting long-term reliability.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance.

Nominal Supply Voltage: 3.3 V

Standard supply voltage for easy integration into existing systems.

Technical Specifications

Analog-to-Digital Converters ADS61B29IRGZR attributes and parameters. Explore more Analog-to-Digital Converters devices from Texas Instruments

Converter Specifications

No. of Analog In Channels:

1

No. of Functions:

1

No. of Bits:

12

Sub-Category:

Analog to Digital Converters

Output Bit Code:

Offset Binary, 2's Complement Binary

Output Format:

Parallel, Word

Maximum Linearity Error (EL):

0.061 %

Sample Rate:

250 MHz

Hold Mode:

Sample

Electrical Specifications

Power Supplies:

1.8,3.3 V

Minimum Analog Input Voltage:

-2 V

Maximum Analog Input Voltage:

2 V

Nominal Supply Voltage:

3.3 V

Operating Conditions

Moisture Sensitivity Level (MSL):

3

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Time At Peak Reflow Temperature:

30 s

Form Factor

Terminal Position:

Quad

No. of Terminals:

48

Terminal Form:

Terminal Pitch:

0.02 in (0.5 mm)

Surface Mount:

Yes

Width:

0.276 in (7 mm)

Length:

0.276 in (7 mm)

Maximum Seated Height:

0.039 in (1 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Shape:

Package Equivalence Code:

LCC48,.27SQ,20

Package Code:

Standards and Codes

JESD-30 Code:

S-PQCC-N48

Qualified:

No

JESD-609 Code:

e4

Trade Compliance

ADS61B29IRGZR Converters trade compliance attributes, and parameters.

ECCN

3A991.C.2

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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